TO-263-2L Plastic-Encapsulate MOSFETS

CJB08N65

N-Channel Power MOSFET

GENERAL DESCRIPTION

This advanced high voltage MOSFET is designed to stand

high energy in the avalanche mode and switch efficiently. This new

high energy device also offers a drain-to-source diode fast

recovery time. Desighed for high voltage, high speed switching

applications such as power supplies, converters, power motor

controls and bridge circuits.

FEATURE



High Current Rating





Lower Capacitance



Lower Total Gate Charge





Avalanche Energy Specified

℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

650

Gate-Source Voltage

±30

V

Continuous Drain Current

8

Pulsed Drain Current

32

A

Single Pulsed Avalanche Energy (note1)

250

mJ

Thermal Resistance from Junction to Ambient

62.5

℃/W

Operating and Storage Temperature Range

-55 ~+150

Maximum Lead Temperature for Soldering Purposes ,

Duration for 5

Seconds

260

℃

TO-263-2L

1. GATE

2. DRAIN

3. SOURCE

1 of 2

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CJB08N65