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IS46TR16256A-107MBLA2 Datasheet(PDF) 1 Page - Integrated Silicon Solution, Inc

Part # IS46TR16256A-107MBLA2
Description  512Mx8, 256Mx16 4Gb DDR3 SDRAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS46TR16256A-107MBLA2 Datasheet(HTML) 1 Page - Integrated Silicon Solution, Inc

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IS43/46TR16256A, IS43/46TR16256AL,
IS43/46TR85120A, IS43/46TR85120AL
Integrated Silicon Solution, Inc.
– www.issi.com –
1
Rev. G2
07/28/2016
512Mx8, 256Mx16 4Gb DDR3 SDRAM
SEPTEMBER 2016
FEATURES
Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
High speed data transfer rates with system
frequency up to 1066 MHz
8 internal banks for concurrent operation
8n-Bit pre-fetch architecture
Programmable CAS Latency
Programmable Additive Latency: 0, CL-1,CL-2
Programmable CAS WRITE latency (CWL) based
on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or
Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT)
Refresh Interval:
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
Partial Array Self Refresh
Asynchronous RESET pin
TDQS (Termination Data Strobe) supported (x8
only)
OCD (Off-Chip Driver Impedance Adjustment)
Dynamic ODT (On-Die Termination)
Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
Write Leveling
Up to 200 MHz in DLL off mode
Operating temperature:
Commercial (TC = 0°C to +95°C)
Industrial (TC = -40°C to +95°C)
Automotive, A1 (TC = -40°C to +95°C)
Automotive, A2 (TC = -40°C to +105°C)
OPTIONS
Configuration:
512Mx8
256Mx16
Package:
96-ball BGA (9mm x 13mm) for x16
78-ball BGA (9mm x 10.5mm) for x8
ADDRESS TABLE
Parameter
512Mx8
256Mx16
Row Addressing
A0-A15
A0-A14
Column Addressing
A0-A9
A0-A9
Bank Addressing
BA0-2
BA0-2
Page size
1KB
2KB
Auto Precharge
Addressing
A10/AP
A10/AP
BL switch on the fly
A12/BC#
A12/BC#
SPEED BIN
Speed Option
15H
125K
107M
093N
Units
JEDEC Speed Grade
DDR3-1333H
DDR3-1600K
DDR3-1866M
DDR3-2133N
CL-nRCD-nRP
9-9-9
11-11-11
13-13-13
14-14-14
tCK
tRCD,tRP(min)
13.5
13.75
13.91
13.09
ns
Note:Faster speed options are backward compatible to slower speed options.
Copyright © 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised
to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product
can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use
in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances


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