0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

3.2

3.4

0

1

2

3

4

5

Input Voltage (V)

VGATE = 4.3 V

VGATE = 3.5 V

VGATE = 2.8 V

VGATE = 2.5 V

VGATE = 2.2 V

C001

V

V

V

V

V

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TXS0104E-Q1

SCES853B – NOVEMBER 2013 – REVISED MAY 2014

TXS0104E-Q1 4-Bit Bidirectional Voltage-Level Translator

for Open-Drain and Push-Pull Applications

1 Features

3 Description

The TXS0104E-Q1 device connects an incompatible

1

•

Qualified for Automotive Applications

logic communication from chip-to-chip due to voltage

•

AEC-Q100 Qualified With the Following Results:

mismatch. This auto-direction translator can be

–

Device Temperature Grade 1: –40°C to 125°C

conveniently used to bridge the gap without the need

Ambient Operating Temperature Range

of direction control from the host. Each channel can

be mixed and matched with different output types

–

Device HBM ESD Classification Level 2

(open-drain or push-pull) and mixed data flows

–

Device CDM ESD Classification Level C6

(transmit or receive) without intervention from the

•

No Direction-Control Signal Required

host. This 4-bit noninverting translator uses two

separate configurable power-supply rails. The A and

•

Maximum Data Rates

–

24 Mbps Maximum (Push Pull)

–

2 Mbps (Open Drain)

accepts any supply voltage from 1.65 V to 3.6 V such

•

1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on B

allows

for

low-voltage

bidirectional

translation

•

between any of the 1.8-V, 2.5-V, 3.3-V, and 5-V

voltage nodes.

•

ESD Protection Exceeds JESD 22

When the output-enable (OE) input is low, all outputs

–

A Port

are placed in the high-impedance state.

–

2000-V Human-Body Model (A114-B)

The TXS0104E-Q1 device is designed so that the OE

–

1000-V Charged-Device Model (C101)

–

B Port

To ensure the high-impedance state during power up

–

15-kV Human-Body Model (A114-B)

or power down, the OE pin must be tied to the GND

pin through a pulldown resistor; the minimum value of

–

1000-V Charged-Device Model (C101)

the resistor is determined by the current-sourcing

•

IEC 61000-4-2 ESD (B Port)

capability of the driver.

–

±8-kV Contact Discharge

–

±10-kV Air-Gap Discharge

Device Information(1)

PART NUMBER

PACKAGE

BODY SIZE (NOM)

2 Applications

TXS0104E-Q1

TSSOP (14)

5.00 mm × 4.40 mm

•

Automotive infotainment, advance driver

(1) For all available packages, see the orderable addendum at

the end of the datasheet.

assistance systems (ADAS)

•

Isolates and Level Translates Between Main

Transfer Characteristics of an N-Channel

Processor and Peripheral Modules

Transistor

•

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.