![]() |
Electronic Components Datasheet Search |
|
IS66WVE1M16EALL-70BLI Datasheet(PDF) 6 Page - Integrated Silicon Solution, Inc |
|
IS66WVE1M16EALL-70BLI Datasheet(HTML) 6 Page - Integrated Silicon Solution, Inc |
6 / 34 page ![]() 6 IS66/67WVE1M16EALL/EBLL/ECLL IS66/67WVE1M16TALL/TBLL/TCLL Rev. C | Oct. 2015 www.issi.com - SRAM@issi.com Functional Description All functions for the device are listed below in Table 2. Mode Power CE# WE# OE# UB#/LB# ZZ# DQ [15:0]4 Note Standby Standby H X X X H High-Z 2,5 Read Active L H L L H Data-Out 1,4 Write Active L L X L H Data-In 1,3,4 No operation Idle L X X X H X 4,5 PAR PAR H X X X L High-Z 6 DPD DPD H X X X L High-Z 6 Load Configuration register Active L L X X L High-Z Table 2. Functional Descriptions Notes 1. When UB# and LB# are in select mode (LOW), DQ0~DQ15 are affected as shown. When only LB# is in select mode, DQ0~DQ7 are affected as shown. When only UB# is in select mode, DQ8~DQ15 are affected as shown. 2. When the device is in standby mode, control inputs (WE#, OE#), address inputs, and data inputs/outputs are internally isolated from any external influence. 3. When WE# is active, the OE# input is internally disabled and has no effect on the I/Os. 4. The device will consume active power in this mode whenever addresses are changed. 5. Vin=VDDQ or 0V, all device pins be static (unswitched) in order to achieve standby current. 6. DPD is enabled when configuration register bit CR[4] is “0”; otherwise, PAR is enabled. |
|