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IS66WVE1M16EALL-70BLI Datasheet(PDF) 21 Page - Integrated Silicon Solution, Inc

Part No. IS66WVE1M16EALL-70BLI
Description  16Mb Async/Page PSRAM
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Maker  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS66WVE1M16EALL-70BLI Datasheet(HTML) 21 Page - Integrated Silicon Solution, Inc

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IS66/67WVE1M16EALL/EBLL/ECLL
IS66/67WVE1M16TALL/TBLL/TCLL
Rev. C | Oct. 2015
www.issi.com - SRAM@issi.com
Description
Conditions
Symbol
TYP
MAX
Unit
Deep Power-Down
(ALL/CLL)
VIN=VDDQ or 0V; +25°C
ZZ# = 0V, CR[4] = 0
Izz
3
10
uA
Deep Power-Down
(BLL)
VIN=VDDQ or 0V; +25°C
ZZ# = 0V, CR[4] = 0
Izz
10
20
uA
Table 10. Deep Power-Down Specifications
Description
Conditions
Symbol
MIN
MAX
Unit
Note
Input Capacitance
TC=+25°C;
f=1Mhz;
VIN=0V
CIN
2.0
6.5
pF
1
Input/Output Capacitance (DQ)
CIO
3.5
6.5
pF
1
Table 11. Capacitance
Notes:
1. These parameters are verified in device characterization and are not 100% tested.
VDDQ/23 Output
Figure 8. AC Input/Output Reference Waveform
Test Points
∫∫
∫∫
VDDQ/22 Input1
VDDQ
VSS
Notes:
1. AC test inputs are driven at VDDQ for a logic 1 and VSS for a logic 0. Input rise and fall times
(10% to 90%) < 1.6ns.
2. Input timing begins at VDDQ/2.
3. Output timing ends at VDDQ/2.
DUT
30pF
50Ω
VDDQ/2
Test Point
Figure 9. Output Load Circuit


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