 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
IS66WVE1M16EALL-70BLI Datasheet(PDF) 20 Page - Integrated Silicon Solution, Inc |
|
||||||||||||||||||||||||||||||
IS66WVE1M16EALL-70BLI Datasheet(HTML) 20 Page - Integrated Silicon Solution, Inc |
|
|
20 / 34 page 
20 IS66/67WVE1M16EALL/EBLL/ECLL IS66/67WVE1M16TALL/TBLL/TCLL Rev. C | Oct. 2015 www.issi.com - SRAM@issi.com Electrical Characteristics (CLL) Parameter Rating Voltage to Any Ball Except VDD, VDDQ Relative to VSS -0.5V to (4.0V or VDDQ + 0.3V, whichever is less) Voltage on VDD Supply Relative to VSS -0.2V to + 2.45V Voltage on VDDQ Supply Relative to VSS -0.2V to + 4.0V Storage Temperature (plastic) -55°Cto + 150°C Operating Temperature -40°C to + 85°C Soldering Temperature and Time 10s (solder ball only) + 260°C Table 8. Absolute Maximum Ratings Notes: Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Description Conditions Symbol MIN MAX Unit Note Supply Voltage VDD 1.7 1.95 V I/O Supply Voltage VDDQ 2.7 3.6 V Input High Voltage VIH VDDQ-0.4 VDDQ+0.2 V 1 Input Low Voltage VIL -0.2 0.4 V 2 Output High Voltage IOH = -0.2mA VOH 0.8 VDDQ V Output Low Voltage IOL = +0.2mA VOL 0.2 VDDQ V Input Leakage Current VIN = 0 to VDDQ ILI 1 uA Output Leakage Current OE#=VIH or Chip Disabled ILO 1 uA Operating Current Conditions Symbol Typ MAX Unit Note Asynchronous Random READ/WRITE VIN = VDDQ or 0V Chip enabled, IOUT = 0 IDD1 -70 30 mA 3 Asynchronous PAGE READ IDD1P -70 20 mA 3 Standby Current VIN=VDDQ or 0V CE# = VDDQ ISB 150 uA 4 Table 9. Electrical Characteristics and Operating Conditions Operating Temperature (–40ºC < TC < +85ºC) Notes: 1. Input signals may overshoot to VDDQ + 1.0V for periods less than 2ns during transitions. 2. Input signals may undershoot to VSS – 1.0V for periods less than 2ns during transitions. 3. This parameter is specified with the outputs disabled to avoid external loading effects. User must add required current to drive output capacitance expected in the actual system. 4. ISB (MAX) values measured with PAR set to FULL ARRAY at +85°C. In order to achieve low standby current, all inputs must be driven to either VDDQ or VSS. ISB might be set slightly higher for up to 500ms after power-up, or when entering standby mode. |
|
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
