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IS66WVE1M16EALL-70BLI Datasheet(PDF) 18 Page - Integrated Silicon Solution, Inc

Part No. IS66WVE1M16EALL-70BLI
Description  16Mb Async/Page PSRAM
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Maker  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS66WVE1M16EALL-70BLI Datasheet(HTML) 18 Page - Integrated Silicon Solution, Inc

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IS66/67WVE1M16EALL/EBLL/ECLL
IS66/67WVE1M16TALL/TBLL/TCLL
Rev. C | Oct. 2015
www.issi.com - SRAM@issi.com
Electrical Characteristics (ALL)
Parameter
Rating
Voltage to Any Ball Except VDD, VDDQ Relative to VSS
-0.5V to (4.0V or VDDQ + 0.3V, whichever is less)
Voltage on VDD Supply Relative to VSS
-0.2V to + 2.45V
Voltage on VDDQ Supply Relative to VSS
-0.2V to + 2.45V
Storage Temperature (plastic)
-55°Cto + 150°C
Operating Temperature
-40°C to + 85°C
Soldering Temperature and Time
10s (solder ball only)
+ 260°C
Table 4. Absolute Maximum Ratings
Notes:
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other
conditions above those indicated in this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Description
Conditions
Symbol
MIN
MAX
Unit
Note
Supply Voltage
VDD
1.7
1.95
V
I/O Supply Voltage
VDDQ
1.7
1.95
V
Input High Voltage
VIH
VDDQ-0.4
VDDQ+0.2
V
1
Input Low Voltage
VIL
-0.2
0.4
V
2
Output High Voltage
IOH = -0.2mA
VOH
0.8 VDDQ
V
Output Low Voltage
IOL = +0.2mA
VOL
0.2 VDDQ
V
Input Leakage Current
VIN = 0 to VDDQ
ILI
1
uA
Output Leakage Current
OE#=VIH or
Chip Disabled
ILO
1
uA
Operating Current
Conditions
Symbol
Typ
MAX
Unit
Note
Asynchronous Random
READ/WRITE
VIN = VDDQ or 0V
Chip enabled,
IOUT = 0
IDD1
-70
30
mA
3
Asynchronous
PAGE READ
IDD1P
-70
20
mA
3
Standby Current
VIN=VDDQ or 0V
CE# = VDDQ
ISB
150
uA
4
Table 5. Electrical Characteristics and Operating Conditions
Operating Temperature (–40ºC < TC < +85ºC)
Notes:
1. Input signals may overshoot to VDDQ + 1.0V for periods less than 2ns during transitions.
2. Input signals may undershoot to VSS – 1.0V for periods less than 2ns during transitions.
3. This parameter is specified with the outputs disabled to avoid external loading effects.
User must add required current to drive output capacitance expected in the actual system.
4. ISB (MAX) values measured with PAR set to FULL ARRAY at +85°C. In order to achieve low
standby current, all inputs must be driven to either VDDQ or VSS. ISB might be set slightly
higher for up to 500ms after power-up, or when entering standby mode.


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