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IS66WVE1M16EALL-70BLI Datasheet(PDF) 11 Page - Integrated Silicon Solution, Inc

Part No. IS66WVE1M16EALL-70BLI
Description  16Mb Async/Page PSRAM
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Maker  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS66WVE1M16EALL-70BLI Datasheet(HTML) 11 Page - Integrated Silicon Solution, Inc

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IS66/67WVE1M16EALL/EBLL/ECLL
IS66/67WVE1M16TALL/TBLL/TCLL
Rev. C | Oct. 2015
www.issi.com - SRAM@issi.com
Low-Power Feature
Standby Mode Operation
During standby, the device current consumption is reduced to the level necessary to
perform the DRAM refresh operation. Standby operation occurs when CE# and ZZ# are HIGH.
The device will enter a reduced power state upon completion of a READ or WRITE
operations when the address and control inputs remain static for an extended period of time.
This mode will continue until a change occurs to the address or control inputs.
Temperature Compensated Refresh
Temperature compensated refresh (TCR) is used to adjust the refresh rate depending on the
device operating temperature. DRAM technology requires more frequent refresh operations to
maintain data integrity as temperatures increase. More frequent refresh is required due to the
increased leakage of the DRAM's capacitive storage elements as temperatures rise. A decreased
refresh rate at lower temperatures will result in a savings in standby current.
TCR allows for adequate refresh at four different temperature thresholds: +15°C, +45°C, +70°C,
and +85°C. The setting selected must be for a temperature higher than the case temperature of
the device. If the case temperature is +50°C, the system can minimize self refresh current
consumption by selecting the +70°C setting. The +15°C and +45°C settings would result in
inadequate refreshing and cause data corruption.


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