IS42VS16160J datasheet(11/16 Pages) ISSI

Part #	IS42VS16160J

Description	32Mx8, 16Mx16, 8Mx32 256Mb Synchronous DRAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

Direct Link	http://www.issi.com

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Integrated Silicon Solution, Inc. - www.issi.com

11

Rev. B

2/5/2015

IS42VS83200J / IS42VS16160J / IS42VS32800J

Symbol

Parameter

Test Condition

–75

–10

Unit

Idd1(1)

Operating Current

One Bank Active, CL = 3, BL = 2,

tclK = tCLK(min), tRC = tRC(min)

70

55

mA

Idd2p(3)

Precharge Standby Current

(In Power-Down Mode)

CKE

≤ Vil (max), tCK = 15ns

CS

≥ Vdd - 0.2V

3

mA

Idd2ps(3)

Precharge Standby Current

With Clock Stop

(In Power-Down Mode)

CKE

≤ Vil (max), CLK ≤ Vil (max)

CS

≥ Vdd - 0.2V

3

mA

Idd2n(2)

Precharge Standby Current

(In Non Power-Down Mode)

CS

≥ Vdd - 0.2V, CKE ≥ Vih (min)

tCK = 15 ns

22

mA

Idd2ns

Precharge Standby Current

With Clock Stop

(In Non-Power Down Mode)

CS

≥ Vdd - 0.2V, CKE ≥ Vih (min)

All Inputs Stable

10

mA

Idd3p(2)

Active Standby Current

(In Power-Down Mode)

CKE

≤ Vil (max), CS ≥ Vdd - 0.2V

tCK = 15 ns, All Banks Active

7

mA

Idd3ps

Active Standby Current

With Clock Stop

(In Power-Down Mode)

CKE

≤ Vil (max), CLK ≤ Vil (max)

CS

≥ Vdd - 0.2V, All Banks Active

7

mA

Idd3n(2)

Active Standby Current

(In Non Power-Down Mode)

CS

≥ Vdd - 0.2V, CKE ≥ Vih (min)

tCK = 15 ns, All Banks Active

30

mA

Idd3ns

Active Standby Current

With Clock Stop

(In Non Power-Down Mode)

CS

≥ Vdd - 0.2V, CKE ≥ Vih (min)

All Inputs Stable, All Banks Active

15

mA

Idd4

Operating Current

All Banks Active, BL = Full, CL = 3

tCK = tCK(min)

100

75

mA

Idd5

Auto-Refresh Current

tRC = tRC(min), tCLK = tCLK(min)

110

80

mA

Idd6

Self-Refresh Current

CKE

≤ 0.2V

3

mA

DC ELECTRICAL CHARACTERISTICS VDD = 1.8V

Notes:

1. Idd (max) is specified at the output open condition.

2. Input signals are changed one time during 30ns.

3. Tested after 500ms delay

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