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CJD05N60B Datasheet(PDF) 1 Page - ZP Semiconductor |
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CJD05N60B Datasheet(HTML) 1 Page - ZP Semiconductor |
1 / 2 page TO-251S Plastic-Encapsulate MOSFETS CJD05N60B N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE High Current Rating Lower RDS(on) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Maximum ratings (Ta=25 ℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 5 Pulsed Drain Current IDM 20 A Single Pulsed Avalanche Energy (note1) EAS 2 50 mJ Power Dissipation PD 1.25 W Thermal Resistance from Junction to Ambient RθJA 100 ℃/W Operating and Storage Temperature Range TJ, TSTG -55 ~+150 Maximum lead temperure for soldering purposes , Duration 5 seconds TL 260 ℃ TO-251S 1. GATE 2. DRAIN 3. SOURCE 1 of 2 sales@zpsemi.com www.zpsemi.com CJD05N60B |
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