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SI4427DY Datasheet(PDF) 3 Page - Vishay Siliconix

Part No. SI4427DY
Description  P-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4427DY Datasheet(HTML) 3 Page - Vishay Siliconix

  SI4427DY Datasheet HTML 1Page - Vishay Siliconix SI4427DY Datasheet HTML 2Page - Vishay Siliconix SI4427DY Datasheet HTML 3Page - Vishay Siliconix SI4427DY Datasheet HTML 4Page - Vishay Siliconix  
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Si4427DY
Vishay Siliconix
New Product
Document Number: 71308
S-01828—Rev. A, 21-Aug-00
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
1500
3000
4500
6000
7500
9000
0
6
12
18
24
30
0.6
0.8
1.0
1.2
1.4
1.6
–50
–25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
20406080
100
120
0
0.005
0.010
0.015
0.020
0.025
0.030
0
1020304050
VDS – Drain-to-Source Voltage (V)
Crss
Coss
Ciss
VDS = 15 V
ID = 13.3 A
ID – Drain Current (A)
VGS = 10 V
ID = 13.3 A
VGS = 10 V
Gate Charge
On-Resistance vs. Drain Current
Qg – Total Gate Charge (nC)
Capacitance
On-Resistance vs. Junction Temperature
TJ – Junction Temperature (_C)
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.005
0.010
0.015
0.020
0.025
0.030
02468
10
TJ = 25_C
ID = 13.3 A
50
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
VGS = 2.5 V
TJ = 150_C
VGS = 4.5 V


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