Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

SI4427DY Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI4427DY
Description  P-Channel 30-V (D-S) MOSFET
Download  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4427DY Datasheet(HTML) 2 Page - Vishay Siliconix

  SI4427DY Datasheet HTML 1Page - Vishay Siliconix SI4427DY Datasheet HTML 2Page - Vishay Siliconix SI4427DY Datasheet HTML 3Page - Vishay Siliconix SI4427DY Datasheet HTML 4Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
Si4427DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71308
S-01828—Rev. A, 21-Aug-00
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = –250 mA
–0.60
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "12 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = –24 V, VGS = 0 V
–1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = –24 V, VGS = 0 V, TJ = 55_C
–5
mA
On-State Drain Currenta
ID(on)
VDS v –5 V, VGS = –10 V
–50
A
DiS
OS
R
i
a
VGS = –10 V, ID = –13.3 A
0.0086
0.0105
W
Drain-Source On-State Resistancea
rDS(on)
VGS = –4.5 V, ID = –12.2 A
0.0105
0.0125
W
VGS = –2.5 V, ID = –9.8 A
0.0165
0.0195
Forward Transconductancea
gfs
VDS = –15 V, ID = –13.3 A
40
S
Diode Forward Voltagea
VSD
IS = –2.5 A, VGS = 0 V
–0.8
–1.2
V
Dynamicb
Total Gate Charge
Qg
V15 V V
4 5 V I
13 3 A
47
70
C
Gate-Source Charge
Qgs
VDS = –15 V, VGS = –4.5 V, ID = –13.3 A
20
nC
Gate-Drain Charge
Qgd
8.3
Turn-On Delay Time
td(on)
V15 V R
15
W
16
25
Rise Time
tr
VDD = –15 V, RL = 15 W
I
1 A V
10 V R
6
W
12
20
Turn-Off Delay Time
td(off)
DD
,
L
ID ^ –1 A, VGEN = –10 V, RG = 6 W
220
330
ns
Fall Time
tf
70
110
Source-Drain Reverse Recovery Time
trr
IF = –2.5 A, di/dt = 100 A/ms
50
80
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
20
30
40
50
0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
50
012345
VGS = 10 thru 3 V
TC = 125_C
–55
_C
25
_C
Output Characteristics
Transfer Characteristics
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
2 V


Html Pages

1  2  3  4 


Datasheet Download

Go To PDF Page

Related Electronics Part Number

Part No.DescriptionHtml ViewManufacturer
SI2303BDS P-Channel 30-V D-S MOSFET 1  2  3  4  5  Vishay Siliconix
AF9435P P-Channel 30-V D-S MOSFET 1  2  3  4  5  Anachip Corp
SI1433DH P-Channel 30-V D-S MOSFET 1  2  3  4  5  Vishay Siliconix
SI4953ADY Dual P-Channel 30-V D-S MOSFET 1  2  3  4  Vishay Siliconix
SI7943DP Dual P-Channel 30-V D-S MOSFET 1  2  3  Vishay Siliconix
SI2303ADS P-Channel 30-V D-S MOSFET 1  2  3  4  Vishay Siliconix
AF4409P P-Channel 30-V D-S MOSFET 1  2  3  Anachip Corp
SI4825DY P-Channel 30-V D-S MOSFET 1  2  3  4  Vishay Siliconix
SUB75P03-07 P-Channel 30-V D-S 175C MOSFET 1  2  3  4  5  Vishay Siliconix
SI7483ADP P-Channel 30-V D-S MOSFET 1  2  3  4  5  Vishay Siliconix

Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn