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S20M60C Datasheet(PDF) 1 Page - Mospec Semiconductor |
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S20M60C Datasheet(HTML) 1 Page - Mospec Semiconductor |
1 / 2 page MOSPEC S20M60C Switchmode Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with high temperature operation metal. The properitary barrier technology allows for reliable operation up to 150℃ junction temperature. Typical application are in switching Mode Power Supplies such as adaptators, Photovoltaic Solar cell protection,free- wheeling and polarity protection diodes. Features * Ultra Low Forward Voltage. * Low Switching noise. * High Current Capacity * Low Power Loss & High efficiency. * 150℃ Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction. * Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O *In compliance with EU RoHs 2002/95/EC directives * Mounting Torqure: 5 in-lbs.Max. SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 60 VOLTS TO-220AB MAXIMUM RATINGS Characteristic Symbol S20M60C Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 60 V RMS Reverse Voltage VR(RMS) 42 V Average Rectifier Forward Current ( per diode ) Total Device (Rated VR), IF(AV) 10 20 A Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) IFSM 250 A Operating and Storage Junction Temperature Range TJ , Tstg -65 to +150 ℃ MILLIMETERS DIM MIN MAX A 14.68 15.32 B 9.78 10.42 C 5.02 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 2.66 G 1.20 1.47 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.98 L 0.33 0.55 M THERMAL RESISTANCES 2.48 2.98 O 3.70 3.90 Typical Thermal Resistance junction to body Rθ j-c 6.5 ℃ /w ELECTRICAL CHARACTERISTICS Characteristic Symbol S20M60C Unit Maximum Instantaneous Forward Voltage Min Typ. Max. ( IF =0.1 Amp TC = 25℃) --- 0.25 0.30 ( IF =10.0 Amp TC = 25℃) --- 0.53 0.55 VF V Maximum Instantaneous Reverse Current ( Rated DC Voltage, TC = 25℃) --- 0.08 0.12 ( Rated DC Voltage, TC = 125℃) IR --- 25 30 mA |
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