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SI2303BDS Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. SI2303BDS
Description  P-Channel, 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI2303BDS Datasheet(HTML) 4 Page - Vishay Siliconix

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Si2303BDS
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72065
S-21980—Rev. A, 04-Nov-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-0.6
-0.3
0.0
0.3
0.6
0.9
-50
-25
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
0
2468
10
TJ = 150_C
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power
Square Wave Pulse Duration (sec)
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
TJ - Temperature (_C)
Time (sec)
ID = 1.7 A
ID = 250 mA
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ = 25_C
1
TA = 25_C
Safe Operating Area, Junction-to-Case
VDS - Drain-to-Source Voltage (V)
100.0
1.0
0.1
1
10
100
0.01
10.0
0.1
Limited
by rDS(on)
TA = 25_C
Single Pulse
10 ms
100 ms
10
ms
100
ms
1 ms
dc, 100 s, 10 s, 1 s
10
8
6
4
2
0
0.01
0.1
1
10
100
1000


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