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SI2303BDS Datasheet(PDF) 3 Page - Vishay Siliconix

Part No. SI2303BDS
Description  P-Channel, 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI2303BDS Datasheet(HTML) 3 Page - Vishay Siliconix

  SI2303BDS Datasheet HTML 1Page - Vishay Siliconix SI2303BDS Datasheet HTML 2Page - Vishay Siliconix SI2303BDS Datasheet HTML 3Page - Vishay Siliconix SI2303BDS Datasheet HTML 4Page - Vishay Siliconix SI2303BDS Datasheet HTML 5Page - Vishay Siliconix  
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Si2303BDS
Vishay Siliconix
New Product
Document Number: 72065
S-21980—Rev. A, 04-Nov-02
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
1234
5
0
50
100
150
200
250
300
0
5
10
15
20
25
30
0.0
0.2
0.4
0.6
0.8
0
2468
10
0
2
4
6
8
10
0
2468
10
0
2
4
6
8
10
012
34
567
On-Resistance vs. Drain Current
Output Characteristics
Transfer Characteristics
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
TC = -55_C
125
_C
5 V
VGS = 10 thru 6 V
2, 3 V
4 V
Gate Charge
Qg - Total Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
Crss
Coss
Ciss
VDS = 15 V
ID = 1.7 A
ID - Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 1.7 A
TJ - Junction Temperature (_C)
VGS = 10 V
VGS = 4.5 V
25
_C


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