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SI2303BDS Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI2303BDS
Description  P-Channel, 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI2303BDS Datasheet(HTML) 2 Page - Vishay Siliconix

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Si2303BDS
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72065
S-21980—Rev. A, 04-Nov-02
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = -10 mA
-30
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = -250 mA
-1.0
-3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
VDS = -30 V, VGS = 0 V
-1
m
Zero Gate Voltage Drain Current
IDSS
VDS = -30 V, VGS = 0 V, TJ = 55_C
-10
mA
On-State Drain Currenta
ID(on)
VDS v -5 V, VGS = -10 V
-6
A
VGS = -10 V, ID = -1.7 A
0.150
0.200
W
Drain-Source On-Resistancea
rDS(on)
VGS = -4.5 V, ID = -1.3 A
0.285
0.380
W
Forward Transconductancea
gfs
VDS = -5 V, ID = -1.7 A
2.0
S
Diode Forward Voltage
VSD
IS = -0.75 A, VGS = 0 V
-0.85
-1.2
V
Dynamicb
Total Gate Charge
Qg
4.3
10
Gate-Source Charge
Qgs
VDS = -15 V, VGS = -10 V
ID ^ -1.7 A
0.8
nC
Gate-Drain Charge
Qgd
ID ^ -1.7 A
1.3
Input Capacitance
Ciss
180
Output Capacitance
Coss
VDS = -15 V, VGS = 0, f = 1 MHz
50
pF
Reverse Transfer Capacitance
Crss
35
Switchingc
td(on)
55
80
Turn-On Time
tr
VDD = -15 V, RL =15 W
^
40
60
td(off)
ID ^ -1.0 A, VGEN = -4.5 V
RG = 6 W
10
20
ns
Turn-Off Time
tf
10
20
Notes
a.
Pulse test: PW
v300 ms duty cycle v2%.
b.
For DESIGN AID ONLY, not subject to production testing.
c.
Switching time is essentially independent of operating temperature.
S FaxBack 408-970-5600


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