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SI2303BDS Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI2303BDS
Description  P-Channel, 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
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SI2303BDS Datasheet(HTML) 1 Page - Vishay Siliconix

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Si2303BDS
Vishay Siliconix
New Product
Document Number: 72065
S-21980—Rev. A, 04-Nov-02
www.vishay.com
1
P-Channel, 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)b
0.200 @ VGS = -10 V
-1.4
-30
0.380 @ VGS = -4.5 V
-1.0
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Si2303BDS (L3)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
"20
V
_
TA= 25_C
- 1.4
-1.3
Continuous Drain Current (TJ = 150_C)b
TA= 70_C
ID
-1.1
-1.0
Pulsed Drain Currenta
IDM
-10
A
Continuous Source Current (Diode Conduction)b
IS
-0.75
-0.6
TA= 25_C
0.9
0.7
Power Dissipationb
TA= 70_C
PD
0.57
0.45
W
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb
120
145
_
Maximum Junction-to-Ambientc
RthJA
140
175
_C/W
Notes
a.
Pulse width limited by maximum junction temperature.
b.
Surface Mounted on FR4 Board, t
v 5 sec.
c.
Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm


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