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TUSB1210BRHBRQ1 Datasheet(PDF) 4 Page - Texas Instruments |
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TUSB1210BRHBRQ1 Datasheet(HTML) 4 Page - Texas Instruments |
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4 / 66 page  TUSB1210-Q1 SLLSEL4A – SEPTEMBER 2014 – REVISED OCTOBER 2014 www.ti.com Pin Functions (continued) PIN A/D TYPE LEVEL DESCRIPTION NAME NO. VDD33 Reference clock input (square-wave only). Tie to GND when pin 26 (CLOCK) is required to be Input mode. Connect to square-wave reference clock of amplitude in REFCLK 1 A I 3.3 V the range of 3 V to 3.6 V when Pin 26 (CLOCK) is required to be Output mode. See pin 14 (CFG) description for REFCLK input frequency settings. When low, all digital logic (except 32 kHz logic required for power up sequencing) RESETB 27 D I VDDIO including registers are reset to their default values, and ULPI bus is tri-stated. When high, normal USB operation. STP 29 D I VDDIO ULPI STP input signal VBAT 21 A power VBAT Input supply voltage or battery source VBUS 22 A power VBUS VBUS pin of the USB connector VDD15 12 A power 1.5-V internal LDO output. Connect to external filtering capacitor. VDD18 28, 30 A power VDD18 External 1.8-V supply input. Connect to external filtering capacitor. VDD33 20 A power VDD33 3.3-V internal LDO output. Connect to external filtering capacitor. VDDIO 32 A I VDDIO External 1.8V supply input for digital I/Os. Connect to external filtering capacitor. Thermal GND A power -- Reference Ground Pad 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VCC Main battery supply voltage (2) 0 5 V Where supply represents the voltage applied Voltage on any input(3) to the power supply pin associated with the –0.3 1 × VCC +0.3 V input VBUS input –2 20 V ID, DP, DM inputs Stress condition specified 24h –0.3 5.25 V VDDIO IO supply voltage Continuous –0.3 1.98 V TA Ambient temperature range –40 85 °C TJ Junction temperature range –40 150 °C Parametric compliance –14 125 °C Ambient temperature for parametric compliance With max 125°C as junction temperature –40 85 °C DP, DM or ID pins short circuited to VBUS DP, DM, ID high voltage short circuit supply, in any mode of TUSB1210-Q1 0 5.25 V operation, continuously for 24 hours (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) The product will have negligible reliability impact if voltage spikes of 5.5 V occur for a total (cumulative over lifetime) duration of 5 milliseconds. (3) Except VBAT input, VBUS, ID, DP, and DM pads 6.2 Handling Ratings MIN MAX UNIT Tstg Storage temperature range –65 150 °C Human body model (HBM), per AEC Q100-002 1500 1500 Classification Level H1C, all pins(1) Electrostatic discharge VESD V (ESD) performance: Corner pins –750 750 Charged device model (CDM), per AEC Q100-011 Classification Level C4B Other pins –500 500 (1) AEC Q100-002 indicates HBM stressing is done in accordance with ANSI/ESDA/JEDEC JS-001 specifications. 4 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: TUSB1210-Q1 |
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