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PHP101NQ03LT Datasheet(PDF) 3 Page - NXP Semiconductors |
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PHP101NQ03LT Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 13 page Philips Semiconductors PHP/PHU101NQ03LT TrenchMOS™ logic level FET Product data Rev. 02 — 25 February 2003 3 of 13 9397 750 10927 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. Tmb =25 °C; IDM is single pulse; VGS = 10V. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 03aa16 0 40 80 120 0 50 100 150 200 Tmb (°C) Pder (%) 03ai19 0 40 80 120 0 50 100 150 200 Tmb (°C) Ider (%) P der P tot P tot 25 C ° () ---------------------- 100% × = I der I D I D25 C ° () ------------------- 100% × = 03ai21 1 10 102 103 1 10 102 VDS (V) ID (A) DC 100 µs 10 ms Limit RDSon = VDS / ID 1 ms tp = 10 µs |
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