NE5517, NE5517A, AU5517

http://onsemi.com

3

NOTE: V+ of output buffers and amplifiers are internally connected.

B

AMP

BIAS

INPUT

B

DIODE

BIAS

B

INPUT

(+)

B

INPUT

(−)

B

OUTPUT

V+ (1)

B

BUFFER

INPUT

B

BUFFER

OUTPUT

AMP

BIAS

INPUT

DIODE

BIAS

INPUT

(+)

INPUT

(−)

OUTPUT

V−

BUFFER

INPUT

BUFFER

OUTPUT

A

AA

A

A

A

A

123

4

5

6

7

8

16

15

14

13

12

11

10

9

−

+

B

+

−

A

Figure 2. Connection Diagram

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Supply Voltage (Note 1)

V

NE5517N, NE5517AN

NE5517D, AU5517D

1500

1125

mW

Thermal Resistance, Junction−to−Ambient

D Package

N Package

140

94

°C/W

Differential Input Voltage

±5.0

V

Diode Bias Current

2.0

mA

Amplifier Bias Current

2.0

mA

Output Short-Circuit Duration

Indefinite

Buffer Output Current (Note 3)

20

mA

Operating Temperature Range

NE5517N, NE5517AN

AU5517T

0 °C to +70 °C

−40 °C to +125 °C

°C

Operating Junction Temperature

150

°C

DC Input Voltage

Storage Temperature Range

−65 °C to +150 °C

°C

Lead Soldering Temperature (10 sec max)

230

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. For selections to a supply voltage above ±22 V, contact factory.

2. The following derating factors should be applied above 25 °C

N package at 10.6 mW/°C

D package at 7.1 mW/°C.

3. Buffer output current should be limited so as to not exceed package dissipation.