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NCV8853 Datasheet(PDF) 5 Page - ON Semiconductor |
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NCV8853 Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 12 page NCV8853 www.onsemi.com 5 ELECTRICAL CHARACTERISTICS (VIN = 3.4 V to 36 V, EN = 5 V. Min/Max values are valid for the temperature range −40 °C ≤ TJ ≤ 150°C unless noted otherwise, and are guaranteed by test, design or statistical correlation.) Characteristic Unit Max Typ Min Conditions Symbol CURRENT SENSE AMP Input Bias Current Isns,bias NCV885300 NCV885301 30 70 50 120 mA CURRENT LIMIT / OVER CURRENT PROTECTION Cycle−by−Cycle Current Limit Threshold Vcl 85 100 115 mV Cycle−by−Cycle Current Limit Response Time tcl 200 nsec Over Current Protection Threshold Vocp % of Vcl 125 150 175 % Over Current Protection Response Time tocp 200 ns GATE DRIVERS Leading Edge Blanking Time ton,min 100 ns Gate Driver Pull Up Current Isink VIN − VGDRV = 4 V 160 230 300 mA Gate Driver Pull Down Current Isrc VIN − VGDRV = 4 V 160 230 300 mA Gate Driver Clamp Voltage (VIN – VGDRV) Vdrv 6.0 8.0 10 V Power Switch Gate to Source Voltage Vgs VIN = 4 V 3.8 V SHORT CIRCUIT PROTECTION Startup Blanking Time tscp,dly From start of soft−start, % of soft−start time 105 300 % Short−Circuit Threshold Voltage Vscp % of Feedback Voltage (Vref) 65 70 75 % Hiccup Time thcp,dly % of Soft−Start Time 135 % SC Response Time tscp Switcher Running 60 200 ns THERMAL SHUTDOWN Thermal Shutdown Threshold Tsd TJ rising 160 170 180 °C Thermal Shutdown Hysteresis Tsd,hys TJ Shutdown – TJ Startup 10 15 20 °C Thermal Shutdown Delay ttsd TJ > Thermal Shutdown Threshold to stop switching 200 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
Similar Part No. - NCV8853_16 |
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Similar Description - NCV8853_16 |
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