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NCV8852 Datasheet(PDF) 4 Page - ON Semiconductor |
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NCV8852 Datasheet(HTML) 4 Page - ON Semiconductor |
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4 / 13 page  NCV8852 www.onsemi.com 4 ELECTRICAL CHARACTERISTICS (VIN = 3.4 V to 36 V, EN = 5 V. Min/Max values are valid for the temperature range −40°C ≤ TJ ≤ 150°C unless noted otherwise, and are guaranteed by test, design or statistical correlation) Characteristic Symbol Conditions Min Typ Max Unit GENERAL Quiescent Current Iq,sleep VIN = 13.2 V, EN = 0 V, Sleep Mode 2.5 6.0 mA Iq,off VIN = 13.2 V, EN = 5 V or toggled, VFB = 1 V, No Switching 2.0 3.0 mA Iq,on VIN = 13.2 V, EN = 5 V or toggled, VFB = 0 V, Switching 3.0 5.0 mA Undervoltage Lockout Vuvlo VIN decreasing 2.9 3.1 3.3 V Undervoltage Lockout Hysteresis Vuvlo,hys 50 150 300 mV Overvoltage Lockout Vovlo 36.9 38 39.3 V OSCILLATOR Switching Frequency fSW 100 500 kHz ROSC Voltage VROSC 1.0 V Default Switching fSW ROSC = Open ROSC = 100 kW ROSC = 20 kW ROSC = 10 kW 153 180 283 409 170 200 315 455 187 220 347 501 kHz Slope Compensation ma 25.5 mV/ ms Minimum On Time tonmin 90 110 140 ns Max Duty Cycle − Switching Dmax,sw Maximum duty cycle when switching 93 % Max Duty Cycle Dmax 100 % Soft−Start Time tss 1.0 1.5 2.0 ms Soft−Start Delay tss,dlly 200 300 400 ms EN/SYNC Low Threshold Vs,il 0.8 V High Threshold Vs,ih 2.0 V Input Current Isync 5.0 10 mA SYNC Frequency Range fsync Relative to Nominal Switching Frequency 80 600 % SYNC Delay ts,dly From SYNC falling edge to GDRV falling edge 50 100 ns SYNC Duty Cycle Dsync 25 75 % Disable Delay Time ten % of fSW 300 % VOLTAGE ERROR AMP DC Gain Av 55 80 91 dB Gain−Bandwidth Product GBW 1.7 2.4 3.1 MHz FB Bias Current Ivfb,bias 0.1 1.0 mA Charge Currents Isrc,vea Source, VFB = 0.9 V, VCOMP = 1.2 V 1.2 1.8 2.5 mA Isnk,vea Sink, VFB = 0.7 V, VCOMP = 1.2 V 0.5 0.8 1.0 Reference Voltage Vref 784 800 816 mV High Saturation Voltage Vc,max 2.2 2.3 V Low Saturation Voltage Vc,min 0.001 0.3 V CURRENT SENSE AMP Common−Mode Range CMR 3.1 40 V Differential Mode Range DMR 300 mV Amplifier Gain Acsa 2.0 V/V |
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