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MCR69-2 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. MCR69-2
Description  SILICON CONTROLLED RECTIFIERS
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MCR69-2 Datasheet(HTML) 2 Page - ON Semiconductor

   
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MCR69–2, MCR69–3
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.5
°C/W
Thermal Resistance, Junction to Ambient
R
θJA
60
°C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″ from Case for 10 Seconds
TL
260
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
IDRM, IRRM
10
2.0
µA
mA
ON CHARACTERISTICS
Peak Forward On-State Voltage
(ITM = 50 A)(1)
(ITM = 750 A, tw = 1 ms)(2)
VTM
6.0
1.8
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ω)
IGT
2.0
7.0
30
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ω)
VGT
0.65
1.5
Volts
Gate Non–Trigger Voltage
(VD = 12 Vdc, RL = 100 Ω, TJ = 125°C)
VGD
0.2
0.40
Volts
Holding Current
(VD = 12 V, Initiating Current = 200 mA, Gate Open)
IH
3.0
15
50
mA
Latching Current
(VD = 12 Vdc, IG = 150 mA)
IL
60
mA
Gate Controlled Turn-On Time(3)
(VD = Rated VDRM, IG = 150 mA)
(ITM = 50 A Peak)
tgt
1.0
µs
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Gate Open, Exponential Waveform, TJ = 125°C)
dv/dt
10
V/
µs
Critical Rate-of-Rise of On-State Current
IG = 150 mA
TJ = 125°C
di/dt
100
A/
µs
(1) Pulse duration
p 300 µs, duty cycle p 2%.
(2) Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decaying current waveform. tw is defined
as 5 time constants of an exponentially decaying current pulse.
(3) The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.


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