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S10M45F Datasheet(PDF) 1 Page - Mospec Semiconductor

Part # S10M45F
Description  Switchmode Schottky Barrier Power Rectifiers
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Manufacturer  MOSPEC [Mospec Semiconductor]
Direct Link  http://www.mospec.com.tw
Logo MOSPEC - Mospec Semiconductor

S10M45F Datasheet(HTML) 1 Page - Mospec Semiconductor

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MOSPEC
S10M45F
Switchmode Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with high temperature operation metal.
The properitary barrier technology allows for reliable operation up to 150℃
junction temperature. Typical application are in switching Mode Power
Supplies such as adaptators, Photovoltaic Solar cell protection,free-
wheeling and polarity protection diodes.
Features
Ultra Low Forward Voltage.
Low Switching noise.
High Current Capacity
Low Power Loss & High efficiency.
150℃ Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction.
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
Mounting Torqure: 5 in-lbs.Max.
ESD: 4KV(Min.) Human-Body Model
In compliance with EU RoHs 2002/95/EC directives
Mounting Torqure: 5 in-lbs.Max.
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
45 VOLTS
MAXIMUM RATINGS
Characteristic
Symbol
S10M45F
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
V
RMS Reverse Voltage
VR(RMS)
31.5
V
Average Rectifier Forward Current
( per diode )
Total Device (Rated VR),
IF(AV)
5
10
A
Non-Repetitive Peak Surge Current (Surge applied at
rate load conditions halfware, single phase, 60Hz)
IFSM
150
A
Operating and Storage Junction Temperature Range
TJ , Tstg
-65 to +150
ITO-220AB
MILLIMETERS
DIM
MIN
MAX
A
15.05
15.15
B
13.35
13.45
C
10.00
10.10
D
6.55
6.65
E
2.65
2.75
F
1.55
1.65
G
1.15
1.25
H
0.55
0.65
I
2.50
2.60
J
3.00
3.20
K
1.10
1.20
L
0.55
0.65
M
4.40
4.60
N
1.15
1.25
O
3.35
3.45
P
2.65
2.75
Q
3.15
THERMAL RESISTANCES
Typical Thermal Resistance junction to case( per diode )
Rθ j-c
10
/w
3.25
R
3.60
3.80
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
S10M45F
Unit
Maximum Instantaneous Forward Voltage ( per diode )
Min
Typ.
Max.
( IF =0.1 Amp TC = 25℃)
---
0.26
0.27
( IF =3.0 Amp TC = 25℃)
---
0.41
0.42
( IF =5.0 Amp TC = 25℃)
VF
---
0.47
0.48
V
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
---
0.03
0.1
( Rated DC Voltage, TC = 125℃)
IR
---
8
10
mA


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