LC75836WS-T

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3

Electrical Characteristics for the Allowable Operating Ranges

Parameter

Symbol

Pin

Conditions

Ratings

Unit

min

typ

max

Hysteresis

VH

CE, CL, DI, INH

0.03VDD

V

Input high-level current

IIH1

CE, CL, DI, INH

VI = 6.0V

5.0

A

IIH2

OSC

VI = VDD external clock operating mode

5.0

Input low-level current

IIL1

CE, CL, DI, INH

VI = 0V

5.0

A

IIL2

OSC

VI = 0V external clock operating mode

5.0

Output high-level voltage

VOH1

S1 to S35

IO = 20A

VDD0.9

V

VOH2

COM1

to COM4

IO = 100A

VDD0.9

VOH3

P1 to P4

IO = 1mA

VDD0.9

Output low-level voltage

VOL1

S1 to S35

IO = 20A

0.9

V

VOL2

COM1

to COM4

IO = 100A

0.9

VOL3

P1 to P4

IO =1mA

0.9

Output middle-level

voltage *1

VMID1

S1 to S35

1/3 bias IO = ±20A

2/3VDD

0.9

2/3VDD

+0.9

V

VMID2

S1 to S35

1/3 bias IO = ±20A

1/3VDD

0.9

1/3VDD

+0.9

VMID3

COM1

to COM4

1/3 bias IO = ±100A

2/3VDD

0.9

2/3VDD

+0.9

VMID4

COM1

to COM4

1/3 bias IO = ±100A

1/3VDD

0.9

1/3VDD

+0.9

Oscillator frequency

fosc

OSC

RC oscillator operating mode

Rosc = 39 k

, Cosc = 1000pF

30.4

38

45.6

kHz

Current drain

IDD1

VDD

Power-saving mode

10

A

IDD2

VDD

VDD = 6.0V output open

RC oscillator operating mode

fosc = 38kHz

350

700

IDD3

VDD

VDD = 6.0V output open

External clock operating mode

fCK = 38kHz

VIH2 = 0.5VDD

VIL2 = 0.1VDD

450

900

Note: *1 Excluding the bias voltage generation divider resistors built in the VDD1 and VDD2. (See Figure 1.)

Figure 1

VSS

To the common and segment drivers

VDD2

VDD1

Except these resistors.

VDD

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.