TRF8011

900MHz RF TRANSMIT DRIVER

SLWS056C − FEBRUARY 1997 − REVISED SEPTEMBER 2000

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POST OFFICE BOX 655303

900-MHz Applications

1000 MHz

for Low-Power Consumption, High

Efficiency, and Highly Linear Operation

Required for Operation

Package for Extremely Small Circuit

Footprint

description

The TRF8011 RF transmit driver amplifier is for use in 800 to 1000 MHz wireless communication systems. It

consists of a two-stage amplifier and a linear ramp controller for burst control in TDMA (time-division multiple

access) applications. Very few external components are required for operation. The input is dc-blocked and

requires no external matching. The output requires external matching suitable for the application frequency.

The device is enabled when the TXEN input is held high. A power control signal applied to the VPC input can

ramp the RF output power up or down to meet ramp and spurious emission specifications in TDMA systems.

The power control signal causes a linear change in output power as the voltage applied to VPC varies between

0 V and 3 V. With the RF input power applied to RFIN at 5 dBm and TXEN high, adjusting VPC from 0 V to 3 V

increases the output power from a typical value of −50 dBm to 24.5 dBm at 900 MHz. Forward isolation with

the input power applied to RFIN at 5 dBm, VPC = 0 V, and TXEN high is typically greater than 50 dB.

The TRF8011 is available in a thermally enhanced, surface-mount, 20-pin PowerPAD

(PWP) thin-shrink small

outline package (TSSOP) and is characterized for operation from −40

°C to 85°C. The PWP package has a

solderable pad that can improve the package thermal performance by bonding the pad to an external thermal

plane. The pad also acts as a low-inductance electrical path to ground and must be electrically connected to

the PCB ground plane as a continuation of the regular package terminals that are designated GND.

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Copyright

 2000, Texas Instruments Incorporated

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

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GND

GND

RFIN

GND

NC

VPC

GND

NC

GND

GND

GND

RFOUT

GND

GND

TXEN

GND

GND

PWP PACKAGE

(TOP VIEW)

NC − No internal connection

PowerPAD is a trademark of Texas Instruments.