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DMC1017UPD Datasheet(PDF) 2 Page - BCD Semiconductor Manufacturing Limited |
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DMC1017UPD Datasheet(HTML) 2 Page - BCD Semiconductor Manufacturing Limited |
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2 / 9 page  POWERDI is a registered trademark of Diodes Incorporated. DMC1017UPD Document number: DS36903 Rev. 1 - 2 2 of 9 www.diodes.com September 2015 © Diodes Incorporated DMC1017UPD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Q1 Value Q2 Value Units Drain-Source Voltage VDSS 12 -12 V Gate-Source Voltage VGSS ±8 ±8 V Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = +25°C TA = +70°C ID 9.5 7.6 -6.9 -5.5 A t<10s TA = +25°C TA = +70°C ID 13.0 10.4 -9.4 -7.5 A Maximum Body Diode Forward Current IS 2 -2 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 50 -35 A Avalanche Current (Note 6) L = 0.1mH IAS 9.7 -9.2 A Avalanche Energy (Note 6) L = 0.1mH EAS 4.7 4.3 mJ Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 2.3 W TA = +70°C 1.5 Thermal Resistance, Junction to Ambient (Note 5) Steady state RθJA 54 °C/W t<10s 29 Thermal Resistance, Junction to Case (Note 5) RθJC 4.1 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics Q1 N-Channel (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 12 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 1 µA VDS = 12V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 0.6 1.5 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) 9.6 17 m Ω VGS = 4.5V, ID = 11.8A 11 25 VGS = 2.5V, ID = 9.8A Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 2.9A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 1787 pF VDS = 6V, VGS = 0V, f = 1.0MHz Output Capacitance Coss 297 Reverse Transfer Capacitance Crss 265 Gate Resistance RG 1.6 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) Qg 18.6 nC VDS = 6V, ID = 11.8A Total Gate Charge (VGS = 10V) Qg 35.4 Gate-Source Charge Qgs 2.7 Gate-Drain Charge Qgd 3.8 Turn-On Delay Time tD(on) 6.9 nS VDD = 6V, RL = 6Ω VGS = 4.5V, RG = 6Ω, ID = 1A Turn-On Rise Time tr 10.9 Turn-Off Delay Time tD(off) 70.3 Turn-Off Fall Time tf 31.8 Body Diode Reverse Recovery Time trr — 13.1 — nS IF = 11.8A, di/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr — 2.2 — nC IF = 11.8A, di/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. |
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