Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

IRLMS1902 Datasheet(PDF) 1 Page - International Rectifier

Part No. IRLMS1902
Description  HEXFET Power MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRLMS1902 Datasheet(HTML) 1 Page - International Rectifier

  IRLMS1902 Datasheet HTML 1Page - International Rectifier IRLMS1902 Datasheet HTML 2Page - International Rectifier IRLMS1902 Datasheet HTML 3Page - International Rectifier IRLMS1902 Datasheet HTML 4Page - International Rectifier IRLMS1902 Datasheet HTML 5Page - International Rectifier IRLMS1902 Datasheet HTML 6Page - International Rectifier IRLMS1902 Datasheet HTML 7Page - International Rectifier IRLMS1902 Datasheet HTML 8Page - International Rectifier  
Zoom Inzoom in Zoom Outzoom out
 1 / 8 page
background image
IRLMS1902
VDSS = 20V
RDS(on) = 0.10Ω
HEXFET® Power MOSFET
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area.
This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET® power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micro6
 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
Description
3/18/04
l
Generation V Technology
l
Micro6 Package Style
l
Ultra Low
RDS(on)
l
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
3.2
ID @ TA = 70°C
Continuous Drain Current, VGS @ 4.5V
2.6
A
IDM
Pulsed Drain Current 
18
PD @TA = 25°C
PowerDissipation
1.7
W
Linear Derating Factor
13
mW/°C
VGS
Gate-to-SourceVoltage
± 12
V
dv/dt
Peak Diode Recovery dv/dt ‚
5.0
V/ns
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Parameter
Min.
Typ.
Max
Units
RθJA
Maximum Junction-to-Ambient
„
–––
–––
75
°C/W
Thermal Resistance Ratings
www.irf.com
1
Micro6
PD - 91540C
Top View
1
2
D
G
A
D
D
D
S
3
4
5
6


Html Pages

1  2  3  4  5  6  7  8 


Datasheet Download

Go To PDF Page

Related Electronics Part Number

Part No.DescriptionHtml ViewManufacturer
IRF7341 HEXFET Power MOSFET 1  2  3  4  5  More International Rectifier
IRLR2905 HEXFET Power MOSFET 1  2  3  4  5  More International Rectifier
IRF7494 HEXFET Power MOSFET 1  2  3  4  5  More International Rectifier
IRLL024N HEXFET Power MOSFET 1  2  3  4  5  More International Rectifier
IRL2910 HEXFET Power MOSFET 1  2  3  4  5  More International Rectifier
IRF8910 HEXFET Power MOSFET 1  2  3  4  5  More International Rectifier
IRFU330 HEXFET Power MOSFET 1  2  3  4  5  More International Rectifier
IRL3402 HEXFET Power MOSFET 1  2  3  4  5  More International Rectifier
IRLR3802 HEXFET Power MOSFET 1  2  3  4  5  More International Rectifier
IRFI5210 HEXFET Power MOSFET 1  2  3  4  5  More International Rectifier

Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn