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STK5F1U3E3D-E Datasheet(PDF) 1 Page - ON Semiconductor

Part # STK5F1U3E3D-E
Description  Inverter Power IPM
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

STK5F1U3E3D-E Datasheet(HTML) 1 Page - ON Semiconductor

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Publication Order Number :
STK5F1U3E3D-E/D
www.onsemi.com
©
Semiconductor Components Industries, LLC, 2015
March 2015 - Rev. 1
ORDERING INFORMATION
See detailed ordering and shipping information on page 16 of this data sheet.
STK5F1U3E3D-E
Overview
This “Inverter Power IPM” is highly integrated device containing all High Voltage (HV) control from HV-DC to
3-phase outputs in a single DIP module (Dual-In line Package). Output stage uses IGBT/FRD technology and
implements Under Voltage Protection (UVP) and Over Current Protection (OCP) with a Fault Detection output flag.
Internal Boost diodes are provided for high side gate boost drive.
Function
 Single control power supply due to Internal bootstrap circuit for high side pre-driver circuit
 All control input and status output are at low voltage levels directly compatible with microcontrollers
 Built-in cross conduction prevention
 Externally accessible embedded thermistor for substrate temperature measurement
 The level of the over-current protection current is adjustable with the external resistor, “RSD”
 Low switching noise by optimized the gate resistor
Certification
 UL1557 (File Number: E339285)
Specifications
Absolute Maximum Ratings
at Tc = 25
C
Parameter
Symbol
Remarks
Ratings
Unit
Supply voltage
VCC
P to N, surge < 500V *1
450
V
Collector-emitter voltage
VCE
P to U,V,W or U,V,W to N
600
V
Output current
Io
P, N, U, V, W terminal current
±50
A
P, N, U, V, W terminal current, Tc=100
C
±25
Output peak current
Iop
P, N, U, V, W terminal current, PW=1ms
±76
A
Pre-driver supply voltage
VD1,2,3,4
VB1 to VS1,VB2 to VS2,VB3 to VS3,VDD to VSS *2
20
V
Input signal voltage
VIN
HIN1, 2, 3, LIN1, 2, 3
0.3 to VDD
V
FAULT terminal voltage
VFAULT
FAULT terminal
0.3 to VDD
V
Maximum loss
Pd
IGBT per channel
67.5
W
Junction temperature
Tj
IGBT,FRD
150
C
Storage temperature
Tstg
40 to +125
C
Operating temperature
Tc
IPM case
20 to +100
C
Tightening torque
MT
A screw part at use M4 type screw *3
1.17
Nm
Withstand voltage
Vis
50Hz sine wave AC 1 minute *4
2000
VRMS
Reference voltage is N terminal = VSS terminal voltage unless otherwise specified.
*1: Surge voltage developed by the switching operation due to the wiring inductance between the P and N terminals.
*2: Terminal voltage: VD1=VB1
VS1, VD2=VB2VS2, VD3=VB3VS3, VD4=VDDVSS.
*3: Flatness of the heat-sink should be 0.25mm and below.
*4: Test conditions: AC 2500V, 1 second.
Inverter Power IPM
for 3-phase Motor Drive
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.


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