SQJ202EP

www.vishay.com

Vishay Siliconix

S15-2474-Rev. A, 19-Oct-15

1

Document Number: 62926

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Automotive Dual N-Channel 12 V (D-S) 175 °C MOSFETs

FEATURES

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited.

b. Pulse test; pulse width

≤ 300 μs, duty cycle ≤ 2 %.

c. When mounted on 1" square PCB (FR4 material).

d. Parametric verification ongoing.

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

PRODUCT SUMMARY

N-CHANNEL 1

N-CHANNEL 2

12

12

0.0065

0.0033

0.0093

0.0045

20

60

Configuration

Dual N

Package

SO-8L Dual Asymmetric

Bottom View

2

G

1

3

S

2

4

G

2

1

S

1

Top View

1

5.13

mm

1

5

13

m

m

N-Channel 1 MOSFET

N-Channel 2 MOSFET

PARAMETER

SYMBOL

N-CHANNEL 1

N-CHANNEL 2

UNIT

Drain-Source Voltage

12

12

V

Gate-Source Voltage

± 20

20

60

A

20

60

Continuous Source Current (Diode Conduction)

44

80

180

Single Pulse Avalanche Current

L = 0.1 mH

18

18

Single Pulse Avalanche Energy

16.2

16.2

mJ

27

48

W

9

16

Operating Junction and Storage Temperature Range

-55 to +175

°C

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

N-CHANNEL 1

N-CHANNEL 2

UNIT

Junction-to-Ambient

85

85

°C/W

Junction-to-Case (Drain)

5.5

3.1