Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

ISO5851-Q1 Datasheet(PDF) 7 Page - Texas Instruments

Click here to check the latest version.
Part # ISO5851-Q1
Description  High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver
Download  40 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

ISO5851-Q1 Datasheet(HTML) 7 Page - Texas Instruments

Back Button ISO5851-Q1 Datasheet HTML 3Page - Texas Instruments ISO5851-Q1 Datasheet HTML 4Page - Texas Instruments ISO5851-Q1 Datasheet HTML 5Page - Texas Instruments ISO5851-Q1 Datasheet HTML 6Page - Texas Instruments ISO5851-Q1 Datasheet HTML 7Page - Texas Instruments ISO5851-Q1 Datasheet HTML 8Page - Texas Instruments ISO5851-Q1 Datasheet HTML 9Page - Texas Instruments ISO5851-Q1 Datasheet HTML 10Page - Texas Instruments ISO5851-Q1 Datasheet HTML 11Page - Texas Instruments Next Button
Zoom Inzoom in Zoom Outzoom out
 7 / 40 page
background image
7
ISO5851-Q1
www.ti.com
SLLSEQ1 – SEPTEMBER 2016
Product Folder Links: ISO5851-Q1
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
(1)
Input, output, or the sum of input and output power should not exceed this value
7.7 Safety Limiting Values
Safety limiting intends to prevent potential damage to the isolation barrier upon failure of input or output circuitry. A failure of
the I/O can allow low resistance to ground or the supply and, without current limiting, dissipate sufficient power to overheat
the die and damage the isolation barrier, potentially leading to secondary system failures.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IS
Safety input, output or supply
current
θJA = 99.6°C/W, VI = 3.6 V, TJ = 150°C, TA = 25°C
349
mA
θJA = 99.6°C/W, VI = 5.5 V, TJ = 150°C, TA = 25°C
228
θJA = 99.6°C/W, VI = 15 V, TJ = 150°C, TA = 25°C
84
θJA = 99.6°C/W, VI = 30 V, TJ = 150°C, TA = 25°C
42
PS
Safety input, output, or total power
θJA = 99.6°C/W, TJ = 150°C, TA = 25°C
1255(1)
TS
Maximum ambient safety
temperature
150
°C
(1)
Production tested
≥6840 VRMS for 1 second in accordance with UL 1577.
7.8 Safety-Related Certifications
VDE
CSA
UL
CQC
TUV
Certified according to
DIN V VDE V 0884-10 (VDE
V 0884-10):2006-12 and DIN
EN 60950-1 (VDE 0805 Teil
1):2011-01
Plan to certify under CSA
Component Acceptance
Notice 5A, IEC 60950-1, and
IEC 60601-1
Certified according to UL
1577 Component Recognition
Program
Certified according to GB
4943.1-2011
Certified according to
EN 61010-1:2010 (3rd Ed)
and
EN 60950-
1:2006/A11:2009/A1:2010/
A12:2011/A2:2013
Reinforced Insulation
Maximum Transient isolation
voltage, 8000 VPK;
Maximum surge isolation
voltage, 8000 VPK,
Maximum repetitive peak
isolation voltage, 2121 VPK
Isolation Rating of 5700 VRMS;
Reinforced insulation per CSA
60950-1- 07+A1+A2 and IEC
60950-1 (2nd Ed.), 800 VRMS
max working voltage (pollution
degree 2, material group I) ;
2 MOPP (Means of Patient
Protection) per CSA 60601-
1:14 and IEC 60601-1 Ed.
3.1, 250 VRMS (354 VPK) max
working voltage
Single Protection, 5700 VRMS
(1)
Reinforced Insulation, Altitude
≤ 5000m, Tropical climate,
400 VRMS maximum working
voltage
5700 VRMS Reinforced
insulation per
EN 61010-1:2010 (3rd Ed) up
to working voltage of 600
VRMS
5700 VRMS Reinforced
insulation per
EN 60950-
1:2006/A11:2009/A1:2010/
A12:2011/A2:2013 up to
working voltage of 800 VRMS
Certification completed
Certificate number: 40040142
Certification planned
Certification completed
File number: E181974
Certification completed
Certificate number:
CQC16001141761
Certification completed
Client ID number: 77311
The safety-limiting constraint is the absolute-maximum junction temperature specified in the Absolute Maximum
Ratings table. The power dissipation and junction-to-air thermal impedance of the device installed in the
application hardware determines the junction temperature. The assumed junction-to-air thermal resistance in the
Thermal Information table is that of a device installed in the High-K Test Board for Leaded Surface-Mount
Packages. The power is the recommended maximum input voltage times the current. The junction temperature is
then the ambient temperature plus the power times the junction-to-air thermal resistance.


Similar Part No. - ISO5851-Q1

ManufacturerPart #DatasheetDescription
logo
Texas Instruments
ISO5851 TI-ISO5851 Datasheet
1Mb / 34P
[Old version datasheet]   High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features
ISO5851DW TI-ISO5851DW Datasheet
1Mb / 34P
[Old version datasheet]   High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features
ISO5851DWR TI-ISO5851DWR Datasheet
1Mb / 34P
[Old version datasheet]   High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features
More results

Similar Description - ISO5851-Q1

ManufacturerPart #DatasheetDescription
logo
Texas Instruments
ISO5452-Q1 TI1-ISO5452-Q1 Datasheet
1Mb / 41P
[Old version datasheet]   High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver
ISO5451-Q1 TI1-ISO5451-Q1 Datasheet
1Mb / 39P
[Old version datasheet]   High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver
ISO5852S-Q1 TI1-ISO5852S-Q1 Datasheet
1Mb / 42P
[Old version datasheet]   High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver
ISO5851 TI-ISO5851 Datasheet
1Mb / 34P
[Old version datasheet]   High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features
ISO5451 TI-ISO5451 Datasheet
1Mb / 38P
[Old version datasheet]   High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features
ISO5452 TI-ISO5452 Datasheet
1Mb / 37P
[Old version datasheet]   High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Split Outputs and Active Safety Features
ISO5500 TI1-ISO5500 Datasheet
1Mb / 40P
[Old version datasheet]   2.5 A Isolated IGBT, MOSFET Gate Driver
ISO5852S TI-ISO5852S_15 Datasheet
1Mb / 37P
[Old version datasheet]   High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Split Outputs and Active Safety Features
ISO5500 TI-ISO5500_15 Datasheet
1Mb / 43P
[Old version datasheet]   ISO5500 2.5-A Isolated IGBT, MOSFET Gate Driver
ISO5852S-EP TI1-ISO5852S-EP Datasheet
1Mb / 43P
[Old version datasheet]   High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com