Electronic Components Datasheet Search |
|
CSD17581Q3AT Datasheet(PDF) 6 Page - Texas Instruments |
|
|
CSD17581Q3AT Datasheet(HTML) 6 Page - Texas Instruments |
6 / 13 page TC - Case Temperature (°C) -50 -25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 D012 VDS - Drain-to-Source Voltage (V) 0.1 1 10 100 0.1 1 10 100 1000 D010 DC 10 ms 1 ms 100 µs 10 µs TAV - Time in Avalanche (ms) 0.01 0.1 1 1 10 100 D011 TC = 25q C TC = 125q C VSD - Source-to-Drain Voltage (V) 0 0.2 0.4 0.6 0.8 1 0.0001 0.001 0.01 0.1 1 10 100 D009 TC = 25°C TC = 125°C TC - Case Temperature (°C) -75 -50 -25 0 25 50 75 100 125 150 175 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 D008 VGS = 4.5 V VGS = 10 V 6 CSD17581Q3A SLPS629 – OCTOBER 2016 www.ti.com Product Folder Links: CSD17581Q3A Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Typical MOSFET Characteristics (continued) TA = 25°C (unless otherwise stated) ID = 16 A Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage Single pulse, max RθJC = 2°C/W Figure 10. Maximum Safe Operating Area (SOA) Figure 11. Single Pulse Unclamped Inductive Switching Figure 12. Maximum Drain Current vs Temperature |
Similar Part No. - CSD17581Q3AT |
|
Similar Description - CSD17581Q3AT |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |