STK5DFU340D-E

www.onsemi.com

5

1.

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device

functionality should not be assumed, damage may occur and reliability may be affected.

2.

Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for

Safe Operating parameters.

3.

This surge voltage developed by the switching operation due to the wiring inductance between VP and HVGND terminals.

4.

VBS = VBU to U, VBV to V, VBW to W

5.

Test conditions : AC 2500 V, 1 s

Rating

Symbol

Conditions

Value

Unit

PFC Section

PFC

IGBT

Collector-emitter voltage

VCE

PFCL to HVGND

600

V

Repetitive peak collector current

ICP

Duty cycle 10%, pulse width 100

s

15

A

Collector current

IC

7

A

Power dissipation

PC

39.1

W

PFC

Diode

Diode reverse voltage

VRM

VP to PFCL

600

V

Repetitive peak forward current

IFP1

Duty cycle 10%, pulse width 100

s

15

A

Diode forward current

IF1

7

A

Power dissipation

PD1

27.2

W

Maximum AC input voltage

VAC

Single-phase Full-rectified

264

V

Maximum output voltage

Vo

In the Application Circuit

(Vac = 200 V, Vout = 380 V,

fc = 40 kHz)

424

V

Maximum output power

Wo

1.8

kW

Input AC current (steady state)

Iin

9.5

Arms

Inverter Section

Supply voltage

VP

VP to HVGND surge < 500 V

(Note 3)

450

V

Collector-emitter voltage

VCE

VP to U, V, W or U, V, W to HVGND

600

V

Output current

Io

VP, HVGND, U, V, W terminal current

±5

A

VP, HVGND, U, V, W terminal

current at Tc = 100

C

±2.9

A

Output peak current

Iop

VP, HVGND, U, V, W terminal current

for a Pulse width of 1 ms

±10

A

Maximum power dissipation

Pd

IGBT per 1 channel

14.7

W

Gate driver section

Gate driver supply voltage

VD1,2,3,4

VBU to U, VBV to V, VBW to W, VDD

to GND ( Note 4)

0.3 to 20

V

Input signal voltage

VIN

HINx, LINx, PFCIN (x=U,V,W)

0.3 to VDD

V

FAULT terminal voltage

VFAULT

FAULT terminal

0.3 to VDD

V

PFCTRIP terminal voltage

VPTRIP

PTRIP terminal

1.5 to 2.0

V

Intelligent Power Module

Junction temperature

Tj

IGBT, FRD

150

C

Storage temperature

Tstg

40 to +125

C

Operating Case temperature

Tc

IPM case temperature

20 to +100

C

Tightening torque

MT

Case mounting screws

0.9

Nm

Isolation voltage

Vis

50 Hz sine wave AC 1 minute (Note 5)

2000

VRMS