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STK5DFU340D-E Datasheet(PDF) 5 Page - ON Semiconductor |
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STK5DFU340D-E Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 15 page STK5DFU340D-E www.onsemi.com 5 ABSOLUTE MAXIMUM RATINGS at Tc= 25°C (Notes 1,2) 1. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. 3. This surge voltage developed by the switching operation due to the wiring inductance between VP and HVGND terminals. 4. VBS = VBU to U, VBV to V, VBW to W 5. Test conditions : AC 2500 V, 1 s Rating Symbol Conditions Value Unit PFC Section PFC IGBT Collector-emitter voltage VCE PFCL to HVGND 600 V Repetitive peak collector current ICP Duty cycle 10%, pulse width 100 s 15 A Collector current IC 7 A Power dissipation PC 39.1 W PFC Diode Diode reverse voltage VRM VP to PFCL 600 V Repetitive peak forward current IFP1 Duty cycle 10%, pulse width 100 s 15 A Diode forward current IF1 7 A Power dissipation PD1 27.2 W Maximum AC input voltage VAC Single-phase Full-rectified 264 V Maximum output voltage Vo In the Application Circuit (Vac = 200 V, Vout = 380 V, fc = 40 kHz) 424 V Maximum output power Wo 1.8 kW Input AC current (steady state) Iin 9.5 Arms Inverter Section Supply voltage VP VP to HVGND surge < 500 V (Note 3) 450 V Collector-emitter voltage VCE VP to U, V, W or U, V, W to HVGND 600 V Output current Io VP, HVGND, U, V, W terminal current ±5 A VP, HVGND, U, V, W terminal current at Tc = 100 C ±2.9 A Output peak current Iop VP, HVGND, U, V, W terminal current for a Pulse width of 1 ms ±10 A Maximum power dissipation Pd IGBT per 1 channel 14.7 W Gate driver section Gate driver supply voltage VD1,2,3,4 VBU to U, VBV to V, VBW to W, VDD to GND ( Note 4) 0.3 to 20 V Input signal voltage VIN HINx, LINx, PFCIN (x=U,V,W) 0.3 to VDD V FAULT terminal voltage VFAULT FAULT terminal 0.3 to VDD V PFCTRIP terminal voltage VPTRIP PTRIP terminal 1.5 to 2.0 V Intelligent Power Module Junction temperature Tj IGBT, FRD 150 C Storage temperature Tstg 40 to +125 C Operating Case temperature Tc IPM case temperature 20 to +100 C Tightening torque MT Case mounting screws 0.9 Nm Isolation voltage Vis 50 Hz sine wave AC 1 minute (Note 5) 2000 VRMS |
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