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NCP335 Datasheet(PDF) 9 Page - ON Semiconductor |
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NCP335 Datasheet(HTML) 9 Page - ON Semiconductor |
9 / 10 page NCP334, NCP335 www.onsemi.com 9 Figure 14. Routing Example 2 oz, 4 Layers, 60 5C/W Example of application definition. T J * TA + R qJA Pd + RqJA RDS(on) I2 TJ: Junction Temperature. TA: Ambient Temperature. Rq = Thermal resistance between IC and air, through PCB. RDS(on): Intrinsic resistance of the IC MOSFET. I: load DC current. Taking into account of Rtheta obtain with: 1 oz, 2 layers: 100 °C/W. At 2 A, 25 °C ambient temperature, RDS(on) 42 mW @ VIN 4.2 V, the junction temperature will be: T J + TA ) R q Pd + 25 ) 0.042 22 100 + 41.8° C W Taking into account of Rq obtain with: 2 oz, 4 layers: 60 °C/W. At 2 A, 25 °C ambient temperature, RDS(on) 42 mW @ VIN 4.2 V, the junction temperature will be: T J + TA ) R q Pd + 25 ) 0.042 22 60 + 35° C. ORDERING INFORMATION Device Marking Package Shipping† NCP334FCT2G AD WLCSP 0.96 x 0.96 mm (Pb−Free) 3000 / Tape & Reel NCP335FCT2G AA WLCSP 0.96 x 0.96 mm (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
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