ATF-55143-BLK datasheet(5/22 Pages) HP

Part #	ATF-55143-BLK

Description	Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package

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4

ATF-55143 Typical Performance Curves

Figure 6. Gain vs. Bias over Frequency.[1]

FREQUENCY (GHz)

0

1

23

4

5

6

0

1

2

3

4

56

0

1

23

4

5

6

30

25

20

15

10

5

2V, 10 mA

2.7V, 10 mA

Figure 8. OIP3 vs. Bias over Frequency.[1]

FREQUENCY (GHz)

2V, 10 mA

2.7V, 10 mA

27

25

23

21

19

17

15

Figure 9. IIP3 vs. Bias over Frequency.[1]

FREQUENCY (GHz)

2V, 10 mA

2.7V, 10 mA

15

10

5

0

-5

Figure 10. P1dB vs. Bias over Frequency.[1,2]

FREQUENCY (GHz)

2V, 10 mA

2.7V, 10 mA

16

14

12

10

8

Figure 11. Gain vs. Ids and Vds at 2 GHz.

[1]

2V

2.7V

3V

Ids (mA)

21

20

19

18

17

16

15

Figure 13. OIP3 vs. Ids and Vds at 2 GHz.

[1]

Ids (mA)

35

33

31

29

27

25

23

21

19

2V

2.7V

3V

Figure 14. IIP3 vs. Ids and Vds at 2 GHz.

[1]

Ids (mA)

035

16

14

12

10

8

6

4

2

0

2V

2.7V

3V

10

520

25

30

15

Figure 7. Fmin vs. Frequency and Bias.

FREQUENCY (GHz)

2V, 10 mA

2.7V, 10 mA

1.2

1.0

0.8

0.6

0.4

0.2

0

Figure 12. Fmin vs. Ids and Vds at 2 GHz.

Ids (mA)

0.60

0.55

0.50

0.45

0.40

0.35

0.30

0.25

0.20

2V

2.7V

3V

Notes:

1. Measurements at 2 GHz were made on a

fixed tuned production test board that was

tuned for optimal OIP3 match with reasonable

noise figure at 2.7 V, 10 mA bias. This circuit

represents a trade-off between optimal noise

match, maximum OIP3 match and a realizable

match based on production test board

requirements. Measurements taken above

and below 2 GHz were made using a double

stub tuner at the input tuned for low noise

and a double stub tuner at the output tuned

for maximum OIP3. Circuit losses have been

de-embedded from actual measurements.

2. P1dB measurements are performed with

passive biasing. Quiescent drain current, Idsq,

is set with zero RF drive applied. As P1dB is

approached, the drain current may increase or

decrease depending on frequency and dc bias

point. At lower values of Idsq, the device is

running close to class B as power output

approaches P1dB. This results in higher P1dB

and higher PAE (power added efficiency)

when compared to a device that is driven by a

constant current source as is typically done

with active biasing. As an example, at a VDS =

2.7V and Idsq = 5 mA, Id increases to 15mA as

a P1dB of +14.5 dBm is approached.

0

1

2

3

4

5

6

0

1

2

3

4

5

6

0

5

10

15

20

25

30

35

035

10

520

25

30

15

035

10

520

25

30

15

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