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NUD3105DMT1G Datasheet(PDF) 5 Page - ON Semiconductor |
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NUD3105DMT1G Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 8 page NUD3105D http://onsemi.com 5 TYPICAL CHARACTERISTICS VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.01 100 10 0.1 0.1 1.0 0.01 1.0 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT ID, DRAIN CURRENT (A) Figure 8. On−Resistance vs. Drain Current and Temperature TEMPERATURE (°C) Figure 9. Gate Leakage vs. Temperature 1.0 0.9 0.8 0.5 0.6 0.7 1.1 1.2 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 30 25 0 5 10 35 40 −50 −25 0 25 50 75 100 125 20 15 125°C 85°C 50°C 25°C −40°C VGS = 3.0 V VGS = 5.0 V Figure 10. Safe Operating Area for NUD3105DLT1 Figure 11. Transient Thermal Response for NUD3105DLT1 0.01 0.1 1.0 10 100 1000 10,000 100,000 1,000,000 D = 0.5 0.2 0.1 0.05 0.02 SINGLE PULSE 0.01 Pd(pk) t1 t2 DUTY CYCLE = t1/t2 PERIOD PW 1.0 0.1 0.01 0.001 t1, PULSE WIDTH (ms) DC PW = 0.1 s DC = 50% PW = 7.0 ms DC = 5% PW = 10 ms DC = 20% Typical IZ vs. VZ V(BR)DSS min = 6.0 V ID−Continuous = 0.5 A VGS = 3.0 V, TC = 25°C |
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