Electronic Components Datasheet Search |
|
FDB12N50 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
|
FDB12N50 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page www.fairchildsemi.com © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.1 • 4/3/09 AN-9066 UniFET ™ — Optimized Switch for Discontinuous Current Mode Power Factor Correction Abstract This application note discusses merits of planar technology power MOSFET in discontinuous current mode power factor correction application. In most test conditions it is cost competitive and gives performance benefits compared to a super-junction technology device. The benefits are verified through the mathematical simulation and system- level experiments. A new planar technology power MOSFET from Fairchild shows faster switching characteristics that contribute to higher efficiency and lower device temperature. Introduction Switch-mode power supplies are increasingly being designed with an active power factor correction at the input stage to meet international regulations for harmonics. The boost topology in discontinuous current mode (DCM) is most suitable power factor correction (PFC) method for converters with less than 300W power rating[1]. In this topology, the switching-on power loss of boost switch is negligible, and the major power losses are the switching-off losses and conduction losses. After the super-junction devices have been introduced, they are often considered as optimized switches for active power factor correction because of extremely low on-resistance and highly non- linear capacitance curves. In the discontinuous current mode power factor correction, however, the conventional planar devices can compete against the powerful super-junction family. This article shows that Fairchild’s UniFET™ power MOSFET can provide performance superior to the super- junction devices in the discontinuous current mode power factor correction applications. Power MOSFET Technologies The super-junction technology utilizes deep P-type pillar structure in the body of the power MOSFET. The effect of the pillars is to confine the electric field in the lightly doped epitaxial region of the power MOSFET. Thanks to this P- pillar, the resistivity of N-epi can be reduced compared to the conventional planar technology, while maintaining the same breakdown voltage. Therefore, typical on-resistance of the super-junction MOSFETs is only one third of the conventional planar power MOSFETs at the same chip size. Most commercially available super-junction devices adopt multiple epi-layers to build the deep P-pillar structure. The multi-epi process, however, has some disadvantages, such as increased process steps and higher manufacturing cost. In contrast, the UniFET™ power MOSFET utilizes a planar double-diffused metal-oxide semiconductor (DMOS) process that is very mature and highly cost competitive. Moreover, it has improved ring terminations and optimized active cell structures compared to the conventional planar power MOSFETs. The resulting specific on-resistance of the UniFET is even close to some super-junction devices at 500V of breakdown voltage range. The planar power MOSFETs also have higher reliability than the super-junction MOSFETs under unclamped inductive switching (UIS) condition, which can occur during power supply power-up or AC line transient. The devices can enter breakdown, and even be destroyed, in the worst situations. Typically, the planar MOSFETs are much better than the super-junction devices in UIS mode. The newest super-junction technology enabled equivalent UIS rating to the planar MOSFETs at unit area; however, its practical rating as a single device is still inferior to planar MOSFETs because of smaller die size. The UIS ruggedness of UniFET is also far better than previous generations of planar technology. For an example, a 265m Ω, 500V UniFET shows more than 80A of avalanche current under low coil UIS test. Moreover, it does not fail at all in the test. On the contrary, a conventional planar MOSFET with same on-resistance failed at around 40A. The improved ruggedness ensures enhanced reliability. In terms of switching performance, a gate charge is one of the benchmarks to compare different devices. The UniFET has a smaller gate charge, faster switching characteristics, and reduced switching power losses than the conventional planar MOSFETs. Some typical electric characteristics benchmarks are shown in Table 1. Table 1. Gate Charge and Parasitic Capacitance Benchmark Data QG COSS CISS CRSS FDB12N50 22nC 140pF 985Pf 12pF FQB12N50 39nC 220pF 1550pF 25pF FDA16N50 32nC 235pF 1495pF 20pF FQA16N50 60nC 325pF 2300pF 35pF Note: 1. FDB12N50 and FDA16N50 are UniFET ™. FQB12N50 and FQA16N50 are QFET ®, is a previous generation of planar power MOSFET. |
Similar Part No. - FDB12N50 |
|
Similar Description - FDB12N50 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |