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NCP5111 Datasheet(PDF) 1 Page - ON Semiconductor

Part # NCP5111
Description  High Voltage, High and Low Side Driver
Download  14 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP5111 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2016
February, 2016 − Rev. 6
1
Publication Order Number:
NCP5111/D
NCP5111
High Voltage, High and Low
Side Driver
The NCP5111 is a high voltage power gate driver providing two
outputs for direct drive of 2 N−channel power MOSFETs or IGBTs
arranged in a half−bridge configuration.
It uses the bootstrap technique to ensure a proper drive of the
high−side power switch.
Features
High Voltage Range: up to 600 V
dV/dt Immunity ±50 V/nsec
Gate Drive Supply Range from 10 V to 20 V
High and Low Drive Outputs
Output Source / Sink Current Capability 250 mA / 500 mA
3.3 V and 5 V Input Logic Compatible
Up to VCC Swing on Input Pins
Extended Allowable Negative Bridge Pin Voltage Swing to −10 V
for Signal Propagation
Matched Propagation Delays between Both Channels
One Input with Internal Fixed Dead Time (650 ns)
Under VCC LockOut (UVLO) for Both Channels
Pin−to−Pin Compatible with Industry Standards
These are Pb−Free Devices
Typical Applications
Half−bridge Power Converters
SOIC−8
D SUFFIX
CASE 751
MARKING
DIAGRAMS
NCP5111
= Specific Device Code
A
= Assembly Location
L or WL
= Wafer Lot
Y or YY
= Year
W or WW
= Work Week
G or
G
= Pb−Free Package
www.onsemi.com
1
PDIP−8
P SUFFIX
CASE 626
NCP5111
AWL
YYWWG
Device
Package
Shipping
ORDERING INFORMATION
NCP5111PG
PDIP−8
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NCP5111DR2G
SOIC−8
(Pb−Free)
2500 / Tape & Reel
(Note: Microdot may be in either location)
PINOUT INFORMATION
2
3
4
1
7
6
5
8
DRV_LO
IN
VCC
GND
VBOOT
DRV_HI
BRIDGE
NC
P5111
ALYW
G
1
8


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