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NCP5111 Datasheet(PDF) 1 Page - ON Semiconductor |
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NCP5111 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 14 page © Semiconductor Components Industries, LLC, 2016 February, 2016 − Rev. 6 1 Publication Order Number: NCP5111/D NCP5111 High Voltage, High and Low Side Driver The NCP5111 is a high voltage power gate driver providing two outputs for direct drive of 2 N−channel power MOSFETs or IGBTs arranged in a half−bridge configuration. It uses the bootstrap technique to ensure a proper drive of the high−side power switch. Features • High Voltage Range: up to 600 V • dV/dt Immunity ±50 V/nsec • Gate Drive Supply Range from 10 V to 20 V • High and Low Drive Outputs • Output Source / Sink Current Capability 250 mA / 500 mA • 3.3 V and 5 V Input Logic Compatible • Up to VCC Swing on Input Pins • Extended Allowable Negative Bridge Pin Voltage Swing to −10 V for Signal Propagation • Matched Propagation Delays between Both Channels • One Input with Internal Fixed Dead Time (650 ns) • Under VCC LockOut (UVLO) for Both Channels • Pin−to−Pin Compatible with Industry Standards • These are Pb−Free Devices Typical Applications • Half−bridge Power Converters SOIC−8 D SUFFIX CASE 751 MARKING DIAGRAMS NCP5111 = Specific Device Code A = Assembly Location L or WL = Wafer Lot Y or YY = Year W or WW = Work Week G or G = Pb−Free Package www.onsemi.com 1 PDIP−8 P SUFFIX CASE 626 NCP5111 AWL YYWWG Device Package Shipping† ORDERING INFORMATION NCP5111PG PDIP−8 (Pb−Free) 50 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. NCP5111DR2G SOIC−8 (Pb−Free) 2500 / Tape & Reel (Note: Microdot may be in either location) PINOUT INFORMATION 2 3 4 1 7 6 5 8 DRV_LO IN VCC GND VBOOT DRV_HI BRIDGE NC P5111 ALYW G 1 8 |
Similar Part No. - NCP5111_16 |
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Similar Description - NCP5111_16 |
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