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PESD2USB3SZ Datasheet(PDF) 4 Page - NXP Semiconductors |
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PESD2USB3SZ Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 19 page PESDXUSB3S_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved. Product data sheet Rev. 3 — 26 April 2016 4 of 19 NXP Semiconductors PESDxUSB3S series ESD protection for differential data lines 6. Characteristics 6.1 Channel characteristics [1] This parameter is guaranteed by design. [2] 100 ns Transmission Line Pulse (TLP); 50 ; pulser at 70 to 90 ns. [3] According to IEC 61000-4-5 (8/20 s). 6.2 Frequency characteristics [1] Normalized to attenuation at 1 MHz. Table 6. Channel characteristics Tamb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Cd diode capacitance f = 1 MHz; VI = 2.5 V [1] -0.45 -pF IRM reverse leakage current per line; VI = 5 V - 1 100 nA VBR breakdown voltage IR = 1 mA 69- V VF forward voltage IF =10mA - 0.8 - V Rdyn dynamic resistance TLP [2] positive transient - 0.16 - negative transient - 0.16 - surge [3] positive transient - 0.25 - negative transient - 0.25 - Table 7. Frequency characteristics Symbol Parameter Conditions Min Typ Max Unit Differential mode: S21dd f3dB cut-off frequency [1] -17 -GHz |
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