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NCV887801D1R2G Datasheet(PDF) 3 Page - ON Semiconductor |
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NCV887801D1R2G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 15 page NCV8878 www.onsemi.com 3 ABSOLUTE MAXIMUM RATINGS (Voltages are with respect to GND, unless otherwise indicated) Rating Value Unit Dc Supply Voltage (VOUT) −0.3 to 40 V Peak Transient Voltage (Load Dump on VOUT) 45 V Dc Supply Voltage (VDRV, GDRV) 12 V Dc Voltage (VC, ISNS) −0.3 to 3.6 V Dc Voltage (DISB, STATUS) −0.3 to 6 V Dc Voltage Stress (VOUT − VDRV) −0.7 to 40 V Operating Junction Temperature −40 to 150 °C Storage Temperature Range −65 to 150 °C Peak Reflow Soldering Temperature: Pb−Free, 60 to 150 seconds at 217°C 265 peak °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE CAPABILITIES Characteristic Value Unit ESD Capability (All Pins) Human Body Model ≥2.0 kV Moisture Sensitivity Level 1 Package Thermal Resistance Junction−to−Ambient, RqJA (Note 1) 100 °C/W 1. 1 in2, 1 oz copper area used for heatsinking. TYPICAL VALUES Part No. Dmax fS Sa Vcl Isrc Isink VOUT SCE NCV887801 83% 450 kHz 53 mV/ms 200 mV 800 mA 600 mA 6.8 V N |
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