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NCV8560SN250T1G Datasheet(PDF) 4 Page - ON Semiconductor

Part # NCV8560SN250T1G
Description  High Performance Low-Power, LDO Regulator
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCV8560SN250T1G Datasheet(HTML) 4 Page - ON Semiconductor

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NCV8560
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ELECTRICAL CHARACTERISTICS
(Vin = 1.750 V, Vout = 1.250 V (adjustable version)), (Vin = Vout + 0.5 V (fixed version)), Cin = Cout =1.0 mF, −40C  TA  125C, Figure 4,
unless otherwise specified.) (Note 10)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
General
Disable Current
IDIS
ENABLE = 0 V, Vin = 6 V
−40C  TA  85C
0.01
1.0
mA
Ground Current
Adjustable Option
1.3 V Option
1.5 V Option
1.8 V to 3.0 V Option
3.3 V to 5.0 V Option
IGND
ENABLE = 0.9 V,
Iout = 1.0 mA to 150 mA
100
135
135
140
145
135
150
170
175
180
mA
Thermal Shutdown Temperature (Note 11)
TSD
150
175
200
C
Thermal Shutdown Hysteresis
TSH
10
C
ADJ Input Bias Current
IADJ
−0.75
0.75
mA
Chip Enable
ENABLE Input Threshold Voltage
Vth(EN)
V
Voltage Increasing, Logic High
0.9
Voltage Decreasing, Logic Low
0.4
Enable Input Bias Current (Note 11)
IEN
3.0
100
nA
Timing
Output Turn On Time
Adjustable Option
1.3 V to 3.5 V Option
5.0 V Option
tEN
ENABLE = 0 V to Vin
15
15
30
25
25
50
ms
10.Performance guaranteed over the indicated operating temperature range by design and/or characterization, production tested at
TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
11. Values based on design and/or characterization.


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