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SUD10P06-280L Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SUD10P06-280L
Description  P-Channel 60-V (D-S), 175C MOSFET, Logic Level
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUD10P06-280L Datasheet(HTML) 2 Page - Vishay Siliconix

   
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SUD/SUU10P06-280L
Vishay Siliconix
www.vishay.com
S FaxBack 408-970-5600
2-2
Document Number: 70780
S-20349—Rev. F, 18-Apr-02
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VDS = 0 V, ID = –250 mA
–60
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = –250 mA
–1.0
–2.0
–3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
VDS = –60 V, VGS = 0 V
–1
Zero Gate Voltage Drain Current
IDSS
VDS = –60 V, VGS = 0 V, TJ = 125_C
–50
mA
DSS
VDS = –60 V, VGS = 0 V, TJ = 175_C
–150
m
On-State Drain Currentb
ID(on)
VDS = –5 V, VGS = –10 V
–10
A
VGS = –10 V, ID = –5 A
0.130
0.170
VGS = –10 V, ID = –5 A, TJ = 125_C
0.31
W
Drain-Source On-State Resistanceb
rDS(on)
VGS = –10 V, ID = –5 A, TJ = 175_C
0.375
W
VGS = –4.5 V, ID = –2 A
0.210
0.280
Forward Transconductanceb
gfs
VDS = –15 V, ID = –5 A
6
S
Dynamic
Input Capacitance
Ciss
635
Output Capacitance
Coss
VDS = –25 V, VGS = 0 V, f = 1 MHz
100
pF
Reverse Transfer Capacitance
Crss
30
Total Gate Charge
Qg
11.5
25
Gate-Source Charge
Qgs
VDS = –30 V, VGS = –10 V, ID = –10 A
3.5
nC
Gate-Drain Charge
Qgd
DS
GS
D
2
Turn-On Delay Timec
td(on)
9
20
Rise Timec
tr
VDD = –30 V, RL = 3 W
16
20
Turn-Off Delay Timec
td(off)
VDD = –30 V, RL = 3 W
ID ] 10 A, VGEN = –10 V, RG = 2.5 W
17
30
ns
Fall Timec
tf
D
GEN
G
19
35
Source-Drain Diode Ratings and Characteristics (TC = 25_C)a
Pulsed Current
ISM
–20
A
Forward Voltageb
VSD
IF = 10 A, VGS = 0 V
–1.3
V
Reverse Recovery Time
trr
IF = 10 A, di/dt = 100 A/ms
50
80
ns
Notes:
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
c.
Independent of operating temperature.


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