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STP80NF06 Datasheet(PDF) 3 Page - STMicroelectronics |
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STP80NF06 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 14 page STP80NF06 - STB80NF06 - STW80NF06 Electrical ratings 3/14 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (vgs = 0) 60 V VGS Gate- source voltage ±20 V ID (1) 1. Current limited by wire bonding Drain current (continuos) at TC = 25°C 80 A ID Drain current (continuos) at TC = 100°C 80 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25°C 300 W Derating factor 2 W/°C EAS (3) 3. Starting Tj= 25°C, ID= 40A, VDD=40V Single pulse avalanche energy 870 mJ Tstg Storage temperature – 65 to 175 175 °C Tj Max. operating junction temperature Table 2. Thermal data Rthj-case Thermal resistance junction-case Max 0.5 °C/W Rthj-a Thermal resistance junction-ambient Max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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