SN65HVD10,SN65HVD10Q,SN75HVD10

SN65HVD11,SN65HVD11Q,SN75HVD11

SN65HVD12,SN75HVD12

SLLS505F − FEBRUARY 2002 − REVISED NOVEMBER 2003

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2

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during

storage or handling to prevent electrostatic damage to the MOS gates.

ORDERING INFORMATION

SIGNALING RATE

UNIT LOADS

TA

PACKAGE

SOIC MARKING

SIGNALING RATE

UNIT LOADS

TA

SOIC(1)

PDIP

SOIC MARKING

25 Mbps

1/2

SN65HVD10D

SN65HVD10P

VP10

10 Mbps

1/8

−40

°C to 85°C

SN65HVD11D

SN65HVD11P

VP11

1 Mbps

1/8

−40 C to 85 C

SN65HVD12D

SN65HVD12P

VP12

25 Mbps

1/2

SN75HVD10D

SN75HVD10P

VN10

10 Mbps

1/8

−0

°C to 70°C

SN75HVD11D

SN75HVD11P

VN11

1 Mbps

1/8

−0 C to 70 C

SN75HVD12D

SN75HVD12P

VN12

25 Mbps

1/2

−40

°C to 125°C

SN65HVD10QD

SN65HVD10QP

VP10Q

10 Mbps

1/8

−40

°C to 125°C

SN65HVD11QD

SN65HVD11QP

VP11Q

(1) The D package is available taped and reeled. Add an R suffix to the part number (i.e., SN75HVD11DR).

ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature range unless otherwise noted(1) (2)

SN65HVD10, SN75HVD10

SN65HVD11, SN75HVD11

SN65HVD12, SN75HVD12

Supply voltage range, VCC

−0.3 V to 6 V

Voltage range at A or B

−9 V to 14 V

Input voltage range at D, DE, R or RE

−0.5 V to VCC + 0.5 V

Voltage input range, transient pulse, A and B, through 100

Ω (see Figure 11)

−50 V to 50 V

Human body model(3)

A, B and GND

16 kV

Electrostatic discharge

Human body model(3)

All pins

4 kV

Electrostatic discharge

Charged-device model(4)

All pins Charge

1 kV

Continuous total power dissipation

See Dissipation Rating Table

Junction temperature, TJ

170

°C

Storage temperature range, Tstg

−65

°C to 150°C

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds

260

°C

(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values, except differential I/O bus voltages, are with respect to network ground terminal.

(3) Tested in accordance with JEDEC Standard 22, Test Method A114-A.

(4) Tested in accordance with JEDEC Standard 22, Test Method C101.

PACKAGE DISSIPATION RATINGS

PACKAGE

TA ≤ 25°C

POWER RATING

DERATING FACTOR(1)

ABOVE TA = 25°C

TA = 70°C

POWER RATING

TA = 85°C

POWER RATING

TA = 125°C

POWER RATING

D(2)

597 mW

4.97 mW/

°C

373 mW

298 mW

100 mW

D(3)

990 mW

8.26 mW/

°C

620 mW

496 mW

165 mW

P

1290 mW

10.75 mW/

°C

806 mW

645 mW

215 mW

(1) This is the inverse of the junction-to-ambient thermal resistance when board-mounted and with no air flow.

(2) Tested in accordance with the Low-K thermal metric definitions of EIA/JESD51−3.

(3) Tested in accordance with the High-K thermal metric definitions of EIA/JESD51−7.