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SN65HVD11D Datasheet(PDF) 2 Page - Texas Instruments |
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SN65HVD11D Datasheet(HTML) 2 Page - Texas Instruments |
2 / 20 page SN65HVD10,SN65HVD10Q,SN75HVD10 SN65HVD11,SN65HVD11Q,SN75HVD11 SN65HVD12,SN75HVD12 SLLS505F − FEBRUARY 2002 − REVISED NOVEMBER 2003 www.ti.com 2 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ORDERING INFORMATION SIGNALING RATE UNIT LOADS TA PACKAGE SOIC MARKING SIGNALING RATE UNIT LOADS TA SOIC(1) PDIP SOIC MARKING 25 Mbps 1/2 SN65HVD10D SN65HVD10P VP10 10 Mbps 1/8 −40 °C to 85°C SN65HVD11D SN65HVD11P VP11 1 Mbps 1/8 −40 C to 85 C SN65HVD12D SN65HVD12P VP12 25 Mbps 1/2 SN75HVD10D SN75HVD10P VN10 10 Mbps 1/8 −0 °C to 70°C SN75HVD11D SN75HVD11P VN11 1 Mbps 1/8 −0 C to 70 C SN75HVD12D SN75HVD12P VN12 25 Mbps 1/2 −40 °C to 125°C SN65HVD10QD SN65HVD10QP VP10Q 10 Mbps 1/8 −40 °C to 125°C SN65HVD11QD SN65HVD11QP VP11Q (1) The D package is available taped and reeled. Add an R suffix to the part number (i.e., SN75HVD11DR). ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range unless otherwise noted(1) (2) SN65HVD10, SN75HVD10 SN65HVD11, SN75HVD11 SN65HVD12, SN75HVD12 Supply voltage range, VCC −0.3 V to 6 V Voltage range at A or B −9 V to 14 V Input voltage range at D, DE, R or RE −0.5 V to VCC + 0.5 V Voltage input range, transient pulse, A and B, through 100 Ω (see Figure 11) −50 V to 50 V Human body model(3) A, B and GND 16 kV Electrostatic discharge Human body model(3) All pins 4 kV Electrostatic discharge Charged-device model(4) All pins Charge 1 kV Continuous total power dissipation See Dissipation Rating Table Junction temperature, TJ 170 °C Storage temperature range, Tstg −65 °C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 °C (1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltage values, except differential I/O bus voltages, are with respect to network ground terminal. (3) Tested in accordance with JEDEC Standard 22, Test Method A114-A. (4) Tested in accordance with JEDEC Standard 22, Test Method C101. PACKAGE DISSIPATION RATINGS PACKAGE TA ≤ 25°C POWER RATING DERATING FACTOR(1) ABOVE TA = 25°C TA = 70°C POWER RATING TA = 85°C POWER RATING TA = 125°C POWER RATING D(2) 597 mW 4.97 mW/ °C 373 mW 298 mW 100 mW D(3) 990 mW 8.26 mW/ °C 620 mW 496 mW 165 mW P 1290 mW 10.75 mW/ °C 806 mW 645 mW 215 mW (1) This is the inverse of the junction-to-ambient thermal resistance when board-mounted and with no air flow. (2) Tested in accordance with the Low-K thermal metric definitions of EIA/JESD51−3. (3) Tested in accordance with the High-K thermal metric definitions of EIA/JESD51−7. |
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