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SI6875DQ Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI6875DQ
Description  Dual P-Channel 20-V (D-S) MOSFET, Common Drain
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI6875DQ Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Si6875DQ
Vishay Siliconix
New Product
www.vishay.com
S FaxBack 408-970-5600
2-2
Document Number: 71230
S-01235—Rev. A, 12-Jun-00
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = –250 mA
–0.45
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "8 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = –16 V, VGS = 0 V
–1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = –16 V, VGS = 0 V, TJ = 70_C
–25
mA
On-State Drain Currenta
ID(on)
VDS = –5 V, VGS = –4.5 V
–20
A
DiS
OS
R
i
a
VGS = –4.5 V, ID = –6.4 A
0.022
0.027
W
Drain-Source On-State Resistancea
rDS(on)
VGS = –2.5 V, ID = –5.5 A
0.029
0.036
W
VGS = –1.8 V, ID = –4.6 A
0.042
0.052
W
Forward Transconductancea
gfs
VDS = –5 V, ID = –6.4 A
19
S
Diode Forward Voltagea
VSD
IS = –1.6 A, VGS = 0 V
–0.70
–1.1
V
Dynamicb
Total Gate Charge
Qg
V10 V V
4 5 V I
6 4 A
26
36
C
Gate-Source Charge
Qgs
VDS = –10 V, VGS = –4.5 V, ID = –6.4 A
4.6
nC
Gate-Drain Charge
Qgd
5.9
Turn-On Delay Time
td(on)
V10 V R
10
W
26
40
Rise Time
tr
VDD = –10 V, RL = 10 W
I1 A V
4 5 V R
6
W
27
40
Turn-Off Delay Time
td(off)
DD
,
L
ID ^ –1 A, VGEN = –4.5 V, RG = 6 W
170
250
ns
Fall Time
tf
75
110
Source-Drain Reverse Recovery Time
trr
IF = –1.6 A, di/dt = 100 A/ms
30
50
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
6
12
18
24
30
0
0.5
1.0
1.5
2.0
2.5
0
6
12
18
24
30
036
9
12
VGS = 5 thru 2.5 V
TC = –55_C
125
_C
25
_C
Output Characteristics
Transfer Characteristics
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
2 V
0.5, 1 V
1.5 V


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