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SI6875DQ Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI6875DQ
Description  Dual P-Channel 20-V (D-S) MOSFET, Common Drain
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI6875DQ Datasheet(HTML) 1 Page - Vishay Siliconix

   
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Si6875DQ
Vishay Siliconix
New Product
Document Number: 71230
S-01235—Rev. A, 12-Jun-00
www.vishay.com
S FaxBack 408-970-5600
2-1
Dual P-Channel 20-V (D-S) MOSFET, Common Drain
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
20
0.027 @ VGS = –4.5 V
–6.4
–20
0.036 @ VGS = –2.5 V
–5.5
0.052 @ VGS = –1.8 V
–4.6
Si6875DQ
D1
S1
S1
G1
1
2
3
4
8
7
6
5
D2
S2
S2
G2
TSSOP-8
Top View
D
S1
G1
D1
P-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
–20
V
Gate-Source Voltage
VGS
"8
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
–6.4
–5.2
A
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
–5.1
–4.1
A
Pulsed Drain Current (10
ms Pulse Width)
IDM
–30
A
Continuous Source Current (Diode Conduction)a
IS
–1.6
–1.08
Maximum Power Dissipationa
TA = 25_C
PD
1.78
1.19
W
Maximum Power Dissipationa
TA = 70_C
PD
1.14
0.76
W
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t
v 10 sec
RthJA
55
70
_C/W
Maximum Junction-to-Ambienta
Steady State
RthJA
85
105
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
35
45
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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