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SI6544DQ Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI6544DQ
Description  N- and P-Channel 30-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI6544DQ Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Si6544DQ
Vishay Siliconix
www.vishay.com
S FaxBack 408-970-5600
2-2
Document Number: 70668
S-56944—Rev. C, 23-Nov-98
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
N-Ch
1.0
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = –250 mA
P-Ch
–1.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
N-Ch
"100
nA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
P-Ch
"100
nA
ZG
V l
D i C
I
VDS = 30 V, VGS = 0 V
N-Ch
1
A
Zero Gate Voltage Drain Current
IDSS
VDS = –30 V, VGS = 0 V
P-Ch
–1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V, TJ = 55_C
N-Ch
5
mA
VDS = –30 V, VGS = 0 V, TJ = 55_C
P-Ch
–5
On-State Drain Currenta
ID(on)
VDS w 5 V, VGS = 10 V
N-Ch
20
A
On-State Drain Currenta
ID(on)
VDS w –5 V, VGS = –10 V
P-Ch
–20
A
DiS
OS
R
i
a
VGS = 10 V, ID = 4.0 A
N-Ch
0.027
0.035
W
Drain-Source On-State Resistancea
rDS(on)
VGS = –10 V, ID = –3.5 A
P-Ch
0.035
0.045
W
Drain-Source On-State Resistancea
rDS(on)
VGS = 4.5 V, ID = 3.4 A
N-Ch
0.038
0.050
W
VGS = –4.5 V, ID = –2.5 A
P-Ch
0.062
0.090
Forward Transconductancea
gfs
VDS = 15 V, ID = 4.0 A
N-Ch
13
S
Forward Transconductancea
gfs
VDS = –15 V, ID = – 3.5 A
P-Ch
7.2
S
Diode Forward Voltagea
VSD
IS = 1.25 A, VGS = 0 V
N-Ch
0.73
1.2
V
Diode Forward Voltagea
VSD
IS = –1.25 A, VGS = 0 V
P-Ch
–0.77
–1.2
V
Dynamicb
Total Gate Charge
Qg
NCh
l
N-Ch
17.5
30
C
Total Gate Charge
Qg
N-Channel
P-Ch
17
30
C
Gate-Source Charge
Qgs
N Channel
VDS = 15 V, VGS = 10 V, ID = 4.0 A
N-Ch
4.0
nC
Gate-Source Charge
Qgs
P-Channel
V15 V V
10 V I
3 5 A
P-Ch
4.4
nC
Gate-Drain Charge
Qgd
VDS = –15 V, VGS = –10 V, ID = –3.5 A
N-Ch
2.5
Gate-Drain Charge
Qgd
P-Ch
3.1
Turn-On Delay Time
td(on)
NCh
l
N-Ch
12
20
Turn-On Delay Time
td(on)
NCh
l
P-Ch
13
20
Rise Time
tr
N-Channel
VDD = 15 V, RL = 15 W
N-Ch
9
20
Rise Time
tr
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
P-Ch
10
20
Turn-Off Delay Time
td(off)
P-Channel
V15 V R
15
W
N-Ch
25
50
ns
Turn-Off Delay Time
td(off)
VDD = –15 V, RL = 15 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
P-Ch
33
60
ns
Fall Time
tf
ID
1 A, VGEN
10 V, RG
6
W
N-Ch
20
40
Fall Time
tf
P-Ch
10
20
Source-Drain
RR
Ti
trr
IF = 1.25 A, di/dt = 100 A/ms
N-Ch
25
60
Reverse Recovery Time
trr
IF = –1.25 A, di/dt = 100 A/ms
P-Ch
30
60
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.


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