 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
SI6544DQ Datasheet(PDF) 1 Page - Vishay Siliconix |
|
||||||||||||||||||||||||||||||
SI6544DQ Datasheet(HTML) 1 Page - Vishay Siliconix |
|
|
1 / 6 page  Si6544DQ Vishay Siliconix Document Number: 70668 S-56944—Rev. C, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600 2-1 N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) N-Channel 30 0.035 @ VGS = 10 V "4.0 N-Channel 30 0.050 @ VGS = 4.5 V "3.4 P-Channel –30 0.045 @ VGS = –10 V "3.5 P-Channel –30 0.090 @ VGS = –4.5 V "2.5 Si6544DQ D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 TSSOP-8 Top View D D1 G1 S1 N-Channel MOSFET S2 G2 D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 –30 V Gate-Source Voltage VGS "20 "20 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID "4.0 "3.5 A Continuous Drain Current (TJ = 150_C)a TA = 70_C ID "3.2 "2.8 A Pulsed Drain Current IDM "20 "20 A Continuous Source Current (Diode Conduction)a IS 1.25 –1.25 Maximum Power Dissipationa TA = 25_C PD 1.0 W Maximum Power Dissipationa TA = 70_C PD 0.64 W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol N- or P-Channel Unit Maximum Junction-to-Ambienta RthJA 125 _C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
