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NCV51400MNTXG Datasheet(PDF) 4 Page - ON Semiconductor |
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NCV51400MNTXG Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 7 page NCP51400, NCV51400 www.onsemi.com 4 ELECTRICAL CHARACTERISTICS −40 °C ≤ TA ≤ 125°C; VCC = 3.3 V; PVCC = 1.8 V; VRI = VTTS = 0.9 V; EN = VCC; COUT = 3 x 10 mF (Ceramic); unless otherwise noted. Parameter Unit Max Typ Min Symbol Conditions PGOOD Leakage Current VTTS = VRI (PGOOD = True) PGOOD = VCC + 0.2 V 1 mA PGOOD = False Delay VTTS is beyond ±20% PGOOD trip thresholds 10 ms PGOOD Output Low Voltage IGOOD = 4 mA 0.4 V EN − Enable Logic Logic Input Threshold EN Logic high VIH 1.7 V EN Logic low VIL 0.3 Hysteresis Voltage EN pin VENHYS 0.5 V Logic Leakage Current EN pin, TA = +25°C IILEAK −1 +1 mA Thermal Shutdown Thermal Shutdown Temperature TSD 150 °C Thermal Shutdown Hysteresis TSH 25 °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Figure 1. Typical DDR−3 Application Schematic |
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