NTF5P03T3D datasheet(5/8 Pages) ONSEMI

Part #	NTF5P03T3D

Description	Power MOSFET

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NTF5P03T3

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TYPICAL ELECTRICAL CHARACTERISTICS

10

020

30

RDS(on) LIMIT

–VGS

100

1

0.1

0.01

1000

100

10

12.5

5.0

2.5

0

300

100

50

0

3

0

5000

4000

GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE

(VOLTS)

3000

2000

Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation

Figure 8. Gate–to–Source and

Drain–to–Source Voltage versus Total Charge

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

RG, GATE RESISTANCE (W)

Figure 10. Diode Forward Voltage versus Current

–VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

–VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

TJ, STARTING JUNCTION TEMPERATURE (°C)

050

40

20

60

1

10

100

0.5

0.7

0.6

1.0

0.1

10

100

1

25

125

150

100

75

50

ID = –2 A

TJ = 25°C

–VGS

VGS = 0 V

VDS = 0 V

TJ = 25°C

Crss

Ciss

Coss

Crss

1

0.8

0.9

Ciss

VGS = 20 V

SINGLE PULSE

TC = 25°C

VDD = –15 V

ID = –4.0 A

VGS = –10 V

VGS = 0 V

TJ = 25°C

ID = –6 A

1 ms

100

ms

10 ms

dc

tr

td(off)

td(on)

–VDS

150

200

250

Q2

Q1

QT

0

30

10

tf

THERMAL LIMIT

PACKAGE LIMIT

1000

6000

7.5

10

2

350

–VDS

10

ms

Mounted on 2”sq. FR4 board (1”sq. 2 oz. Cu 0.06” thick

single sided) with on die operating, 10 s max.

0

5

10

15

20

25

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NTF5P03T3D Datasheet(PDF) 5 Page - ON Semiconductor

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